Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat a L'energie Atomique

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Aledia

Adrien Gasse

Hubert Bono

Marion Volpert

Ludovic Dupre

Francois Levy

Marc Arques

Philippe Gilet

Xavier Hugon

Badhise Ben Bakir

Bernard Andre

Guy Parat

Yohan Desieres

Amélie Dussaigne

Bertrand Chambion

David Henry

Pascal Revirand

Andrea Brambilla

Gilles Le Blevennec

Adam Pron

Marianne Consonni

Nicolas Eustathopoulos

François Levy

G&eacute;rard Bourgeois

Gerard Bourgeois

Gisele Coing-Boyat

Sylvie Jarjayes

Sandra Desvergne-Bleneau

Gis&egrave;le Coing-Boyat

An optoelectronic light emitting device includes a light emitting diode configured to emit a first radiation, a conversion layer including at least one planar quantum well configured to convert the first radiation into a second radiation, by photoluminescence, a grating for extracting the second radiation being etched on an upper face of the layer, and a lateral reflector having a reflective surface which extends facing part at least of a lateral surface of the conversion layer.

Light emitting device, pixel comprising several such devices, matrix of pixels and associated manufacturing methods

Photo-emitting and/or photo-receiving diode array device, comprising:

Photo-emitting and/or photo-receiving diode array device

A method for producing a patterned layer of material includes producing a first substrate having a patterned face, producing, against the patterned face of the first substrate, a stack of layers having an intermediate layer and the layer to be patterned, the intermediate layer being disposed between the layer to be patterned and the first substrate, a first face of the intermediate layer disposed on the first substrate side being patterned in accordance with a design that is the inverse of that of the patterned face of the first substrate, and removing the first substrate. The intermediate layer is anisotropically etched from the first face of the intermediate layer, and at least part of the thickness of the layer to be patterned is etched, patterning a face of the layer to be patterned in accordance with the design of the first face of the intermediate layer.

Method for producing a patterned layer of material

The invention relates to a method for producing a first microelectronic chip including a layer of interest having a connection face, intended to be hybridized with a second microelectronic chip. The method including depositing a layer of adhesive on a face of the layer of interest opposite to the first connection face and fastening a handle layer to the layer of adhesive. The method also includes, prior to the steps of depositing the adhesive and fastening the handle layer, defining, on the one hand, a maximum thickness eand a minimum value Eand a maximum value Eof the Young's modulus for the layer of adhesive, and, on the other hand, the minimum thickness efor the handle layer.

Method for producing a microelectronic chip to be hybridised to a second chip

A method for producing a photo-emitting and/or photo-receiving device with a metal optical separation grid, comprising at least:

Method for producing a photo-emitting and/or photo-receiving device with a metal optical separation grid

An electronic circuit including a semiconductor substrate having first and second opposite surfaces and electrically-insulating trenches. Each trench includes at least first and second insulating portions made of a first insulating material, extending from the first surface to the second surface, first and second intermediate portions, extending from the first surface to the second surface, made of a first filling material, and a third insulating portion extending from the first surface to the second surface, the first insulating portion being in contact with the first intermediate portion, the second insulating portion being in contact with the second intermediate portion, and the third insulating portion being interposed between the intermediate portions.

Electronic circuit comprising electrical insulation trenches

An optoelectronic device provided with a support including a face having at least one concave or convex portion, the amplitude of the sagitta of said portion being higher than 1/20th of the chord of the portion, and light-emitting diodes arranged on the portion, each light-emitting diode including a cylindrical, conical or frustoconical semiconductor element in contact with the portion, the amplitude of the sagitta of the contact surface between each semiconductor element and the portion being lower than or equal to 0.5 um.

Optoelectronic device with light-emitting diodes and an improved radiation pattern

A heat-sink device intended for at least one electronic component (), includes: a heat-sink; a substrate () for the at least one electronic component (), said substrate covering the heat-sink; and thermal coupling provided between the substrate and the heat-sink and made from a material different from that of the heat-sink. The heat-sink comprises of a set of independent fins (), and the thermal-coupling () is made from a heat-conductive polymer material and also serve as mechanical coupling between the substrate () and the fins ().

Heat-sink device intended for at least one electronic component and corresponding method

The invention relates to a process for manufacturing light-emitting diodes comprising the following steps: a) forming light-emitting diodes () on a silicon layer () of an SOI wafer (), said layer resting on a carrier (); b) bonding, on the light-emitting diode side, a silicon wafer forming a cap () equipped with a void facing each light-emitting diode; c) thinning the silicon wafer to form an aperture facing each light-emitting diode; d) filling each aperture with a transparent material (); and e) at least partially removing the carrier of the SOI wafer () and producing connecting and heat-sinking metallizations.

Process for forming light-emitting diodes

A component emitting light radiation comprising a vertical junction supported on a substrate, the face of the substrate opposite the face on which the junction is made is provided with at least one first conducting zone dedicated to electrical contact and a second conducting zone insulated from the substrate and from the first conducting zone, the second zone being dedicated to heat dissipation.

LED component with low RTH with dissociated electrical and thermal paths

A light-emitting diode component includes a primary source, a conversion layer forming a secondary source configured for absorbing the primary radiation at least in part and emitting a secondary radiation, an encapsulation layer, situated between the primary and secondary sources. The light-emitting diode component also includes a reflection layer (i) situated between the encapsulation layer and the conversion layer and having a face in contact with the encapsulation layer so as to form an interface with the encapsulation layer, the reflection layer (i) and the encapsulation layer being configured so that the interface allows the primary radiation originating from the primary source to pass and reflects the secondary radiation toward the outside of the light emitting diode.

Light emitting diode component

A method of manufacturing a device based on LEDs includes the growth of semiconducting nanowires on a first electrode produced on an insulating face, and encapsulation thereof in planarizing material; the formation, on the planarizing material, of a second electrode with contact take-up areas. LEDs are formed by releasing a band of the first electrode around each take-up area, including forming a mask defining the bands on the second electrode, chemically etching the planarizing material, stopped so as to preserve planarizing material, chemically etching the portion of nanowires thus released, and then chemically etching the remaining planarizing material. A trench is formed along each of the bands as far as the insulating face and the LEDs are placed in series by connecting the take-up areas and bands of the first electrode.

Method of manufacturing a light emission device based on light emitting diodes

The invention relates to a composite polymer material comprising an adhesive resin matrix and an electrically-conductive filler that consists of an oligoaniline in an electrically-conductive form comprising from 4 to 30 repeat units and present in an amount ranging from 15 to 40% by weight relative to the total weight of the material, said material having a resistivity ranging from 10to 10&#x3a9;.cm.

Adhesive composite material with controlled resistivity

This device for detecting electromagnetic radiation, in particular X-ray or &#x3b3;-rays, includes: a sensing layer consisting of at least one material capable of interacting with said electromagnetic radiation to be detected, in order to liberate mobile charge carriers, whereof the movement generates an electric current; a substrate provided with a plurality of elementary collectors of the charge carriers thus liberated, said elementary collectors being distributed discretely; a transfer layer suitable for transferring the charge carriers liberated by the sensing layer at the elementary collectors, said layer being connected to the sensing layer; and an insulating adhesive mating layer, suitable for mating the plurality of elementary collectors and the transfer layer.

Device for detecting electromagnetic radiation and ionizing radiation having an isotropic transfer layer

The arrays of independently-addressable resistors are commonly used to control miniature elements. The invention proposes solving the problem caused by the loss of power dissipated in the addressed resistor by choosing, for this resistor, a material with a negative thermal coefficient resistance, which enables the addressing output of this resistor to be increased.

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Grenoble, France

Adrien Gasse