Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Adrian Stefan Avramescu

Christoph Eichler

Uwe Strauss

Alfred Lell

Jens Mueller

Matthias Sabathil

Teresa Wurm

Siegfried Herrmann

Stephan Lutgen

Tansen Varghese

Matthias Peter

Clemens Vierheilig

Désirée Queren

Alexander Behres

Georg Brüderl

Jelena Ristic

Hubert Halbritter

Volker Härle

Sven Gerhard

Lutz Höppel

Patrick Rode

Martin Strassburg

Hans-Jürgen Lugauer

Ines Pietzonka

Alvaro Gomez-Iglesias

Roland Enzmann

Sebastian Taeger

Soenke Tautz

Volker Haerle

Harald Koenig

Andreas Waag

Dimitri Dini

Uwe Strauβ

Sönke Tautz

Andreas Breidenassel

Georg Roßbach

Stephan Miller

Hans-Juergen Lugauer

Sönke Fündling

Frederik Steib

Teresa Lermer

Thomas Hager

Martin Straßburg

Jana Hartmann

Volker Hârle

An electromagnetic radiation emitting device and a method for applying a converter layer to an electromagnetic radiation emitting device are disclosed. In an embodiment, a method includes applying converter elements to a surface of a carrier, applying the converter elements to an electromagnetic radiation emitting device by applying the carrier to the electromagnetic radiation emitting device such that the surface of the carrier with the applied converter elements faces the electromagnetic radiation emitting device and forming a converter layer on the electromagnetic radiation emitting device by depositing a plurality of thin layers on the converter elements using an atomic layer deposition process.

Electromagnetic radiation emitting device and method of applying a converter layer to an electromagnetic radiation emitting device

An optoelectronic semiconductor body is provided with a layer stack with an active region which is configured to emit electromagnetic radiation and which includes a main extension plane, wherein the layer stack comprises side walls which extend transversely to the main extension plane of the active region, and the side walls are covered at least in places with a cover layer which is formed with at least one semiconductor material. In addition, an arrangement of a plurality of optoelectronic semiconductor bodies and a method for producing an optoelectronic semiconductor body are provided.

Optoelectronic semiconductor body having a layer stack, arrangement of a plurality of optoelectronic semiconductor bodies having a layer stack, and method for producing said optoelectronic semiconductor body

A method for manufacturing a semiconductor apparatus may include forming a patterned mask over a substrate, so that a first region of a first main surface of the substrate is covered by a plurality of spaced-apart sub-structural elements of a dielectric material, and second regions of the first main surface are not covered. Each of the plurality of sub-structural elements is arranged between adjacent second regions. The method also comprises carrying out a selective growth process of semiconductor material, so that the semiconductor material is grown over the second regions of the first main surface.

Method for manufacturing a semiconductor device using a patterned dielectric mask and semiconductor device

A light-emitting semiconductor component may include a semiconductor body having an active region configured to emit a primary radiation, a first conversion element to convert the primary radiation to a first secondary radiation, a second conversion element to convert the primary radiation to a second secondary radiation, and a mask. The first conversion element and the second conversion element may be arranged at a top side of the semiconductor body, may be configured as bodies that partly cover the semiconductor body, and may be connected to the semiconductor body. The mask may be arranged between the first conversion element, the second conversion element, and the semiconductor body. The mask may have an opening in the region of each conversion element.

Light-emitting semiconductor component and method for producing a light-emitting semiconductor component

An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.

Optoelectronic semiconductor chip and method of manufacturing the same

A diffractive optical element includes a carrier and a plurality of nano- or micro-scale rods arranged above a top side of the carrier, wherein the rods are arranged parallel to one another in a regular grid arrangement. A method of producing a diffractive optical element includes providing a carrier and epitaxially growing a plurality of mutually parallel nano- or micro-scale rods in a regular gird arrangement above a top side of the carrier.

Diffractive optical element, method of producing a diffractive optical element and laser component

A laser diode has a layer arrangement including a first layer structure extending along a Z axis in a longitudinal direction, along an X axis in a transverse direction and along a Y axis in a height direction, and a second and third layer structure arranged along the Z axis on opposite longitudinal sides of the first layer structure and adjoining the first layer structure, wherein the active zone of the first layer structure is arranged offset in height relative to the active zones of the second and third layer structures, and an intermediate layer is arranged laterally with respect to the first layer structure in the second and third layer structures, the intermediate layer configured as an electrically blocking layer that hinders or prevents a current flow, and the intermediate layer being arranged between the active zone and an n contact.

Laser diode

An optoelectronic component is disclosed. In an embodiment the optoelectronic component includes an active zone configured to produce electromagnetic radiation, wherein the active zone has at least two quantum films, wherein the first quantum film is arranged between a first barrier layer and a second barrier layer, wherein the second quantum film is arranged between the second barrier layer and a last barrier layer, and wherein bandgaps of the first barrier layer and of the second barrier layer are related differently to one another than bandgaps of the second barrier layer and of the last barrier layer.

Optoelectronic component

An optoelectronic component and a method for the producing an optoelectronic component are disclosed. In an embodiment, the component comprises an active zone for generating electromagnetic radiation, wherein the active zone adjoins at least one layer arrangement of a semiconductor material, wherein the layer arrangement comprises at least two layers, wherein the two layers are formed in such a way that at an interface between the two layers a piezoelectric field is provided, the piezoelectric field configured to provide an electrical voltage drop at the interface, wherein a peak doping region is provided at the interface of the two layers in order to reduce the electrical voltage drop, wherein, in the direction away from the active zone, a doping of the peak doping region increases at least by a first percentage value and then decreases by at least a second percentage value, and wherein the first percentage value and the second percentage value are greater than 10% of a maximum doping of the peak doping region.

Optoelectronic component and method for the production thereof

A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide.

Semiconductor stripe laser

An optoelectronic semiconductor component includes a layer stack based on a nitride compound semiconductor and has an n-type semiconductor region , a p-type semiconductor region and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region. In order to form an electron barrier, the p-type semiconductor region includes a layer sequence having a plurality of p-doped layers composed of AlInGaN where 0&#x3c;=x&#x3c;=1, 0&#x3c;=y&#x3c;=1 and x+y&#x3c;=1. The layer sequence includes a first p-doped layer having an aluminum proportion x&#x3e;=0.5 and a thickness of not more than 3 nm, and the first p-doped layer, at a side facing away from the active layer, is succeeded by at least a second p-doped layer having an aluminum proportion x&#x3c;xand a third p-doped layer having an aluminum proportion x&#x3c;x

Optoelectronic semiconductor device

An optoelectronic semiconductor body has a substrate that includes a strained layer that is applied to the substrate in a first epitaxy step. The strained layer includes at least one recess formed vertically in the strained layer. In a second epitaxy step, a further layer applied to the strained layer. The further layer fills the at least one recess and covers the strained layer at least in some areas.

Optoelectronic semiconductor body and method for producing an optoelectronic semiconductor body

A semiconductor laser includes a layer structure with superimposed layers with at least the following layer structure: an n-doped outer layer, a third wave-guiding layer, an active zone in which light-generating structures are arranged, a second wave-guiding layer, a blocking layer, a first wave-guiding layer, a p-doped outer layer. The first, second and third wave-guiding layers have at least AlInGa (1&#x2212;x&#x2212;y) N. The blocking layer has an Al content which is at least 2% greater than the Al content of the adjacent first wave-guiding layer. The Al content of the blocking layer increases from the first wave-guiding layer towards the second wave-guiding layer. The layer structure has a double-sided gradation. The double-side gradation is arranged at the height of the blocking layer such that at least one part of the blocking layer or the entire blocking layer is of greater width than the first wave-guiding layer.

Semiconductor laser with improved current conduction

A semiconductor chip with a layer stack includes a first semiconductor layer sequence and a second semiconductor layer sequence. The first semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active zone arranged therebetween. The second semiconductor layer sequence includes the second semiconductor region of the second conductivity type, a third semiconductor region of the first conductivity type and a second active zone arranged therebetween.

Optoelectronic semiconductor chip and method for producing the latter

In at least one embodiment, the bar laser () has a semiconductor layer sequence () with an active zone (). A waveguide () with a defined width (B) is formed as an elevation from the semiconductor layer sequence (). A contact metallization () is applied to an upper side () of the waveguide () facing away from the active zone (). A current flow layer () is in direct contact with the contact metallization (). The contact metallization () is electrically connected via the current flow layer (). A current flow width (C) of the active zone () and/or the waveguide () is less than the width (B) of the waveguide ().

Ridge laser

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Wuppertal, Germany

Adrian Stefan Avramescu