Cree Gmbh

Wolfspeed, Inc.

Adrian Powell

Robert Tyler Leonard

Valeri Fedorovich Tsvetkov

Mark Brady

Stephan Georg Mueller

Jason Ronald Jenny

Yuri Khlebnikov

Calvin H Carter, Jr

Hudson McDonald Hobgood

David Phillip Malta

Simon Bubel

Elif Balkas

Matthew David Conrad

Caleb A Kent

Steven Griffiths

Michael J Paisley

Eugene Deyneka

Oleksandr Kramarenko

Varad R Sakhalkar

Cem Basceri

Michael O'Loughlin

Cengiz Balkas

Vijay Balakrishna

Valeri T Tsvetkov

Jeffrey C Seaman

Igor Khlebnikov

Al Burk

Murat N Silan

Hudson McD Hobgood

Curt Progl

Michael P Laughner

Davis Andrew McClure

George J Fechko, Jr

Alexander Kevin Shveyd

Michael Fusco

Lukas Nattermann

Kathy Doverspike

Valerl F Tsvetkov

William H Brixius

Stephen G Mueller

Hudson McDONALD Hobgood

Davis Mcclure

Michael Paul Laughner

Hudson Mcd Hobgood

Valeri F Tsevtkov

Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.

Large diameter silicon carbide wafers

Silicon carbide (SiC) materials including SiC wafers and SiC boules and related methods are disclosed that provide large dimension SiC wafers with reduced crystallographic stress. Growth conditions for SiC materials include maintaining a generally convex growth surface of SiC crystals, adjusting differences in front-side to back-side thermal profiles of growing SiC crystals, supplying sufficient source flux to allow commercially viable growth rates for SiC crystals, and reducing the inclusion of contaminants or non-SiC particles in SiC source materials and corresponding SiC crystals. By forming larger dimension SiC crystals that exhibit lower crystallographic stress, overall dislocation densities that are associated with missing or additional planes of atoms may be reduced, thereby improving crystal quality and usable SiC crystal growth heights.

Large dimension silicon carbide single crystalline materials with reduced crystallographic stress

Stabilized, high-doped silicon carbide is described. A silicon carbide crystal is grown on a substrate using chemical vapor deposition so that the silicon carbide crystal includes a dopant and the strain compensating component. The strain compensating component can be an isoelectronic element and/or an element with the same majority carrier type as the dopant. The silicon carbide crystal can then be cut into silicon carbide wafers. In some embodiments, the dopant is n-type and the strain compensating component is selected from a group comprising germanium, tin, arsenic, phosphorus, and combinations thereof. In some embodiments, the strain compensating component comprises germanium and the dopant is nitrogen.

Stabilized, high-doped silicon carbide

A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

Method of producing high quality silicon carbide crystal in a seeded growth system

Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface

Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

Micropipe-free silicon carbide and related method of manufacture

A semiconductor crystal and associated growth method are disclosed. The crystal includes a seed portion and a growth portion on the seed portion. The seed portion and the growth portion form a substantially right cylindrical single crystal of silicon carbide. A seed face defines an interface between the growth portion and the seed portion, with the seed face being substantially parallel to the bases of the right cylindrical crystal and being off-axis with respect to a basal plane of the single crystal. The growth portion replicates the polytype of the seed portion and the growth portion has a diameter of at least about 100 mm.

One hundred millimeter SiC crystal grown on off-axis seed

A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm.

Low micropipe 100 mm silicon carbide wafer

A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density from about 500 cmto about 2000 cm.

Low 1C screw dislocation 3 inch silicon carbide wafer

A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm.

One hundred millimeter single crystal silicon carbide wafer

Growing community of inventors

Cary, NC, United States of America

Adrian Powell