Micron Technology Incorporated

Nan Ya Technology Corporation

Round Rock Research, LLC

Other

Adrian J Drexler

Yutaka Ito

Debra M Bell

Tyler J Gomm

Seong-Hoon Lee

Brandi M Jones

Adam Saleh El-Mansouri

Ryan Martin Hofstetter

Hofstetter Martin Ryan

A memory array structure includes: a plurality of array sections and a plurality of mini-gaps, wherein each mini-gap is disposed between two array sections of the plurality of array sections. Each mini-gap includes: a local write device, for providing a data signal in response to a write enable signal and a write data signal, the data signal for performing a write operation on a memory cell of an array section; and a local sensor, for outputting a data signal in response to an activation command and a read enable signal. The memory array further includes a control logic for providing the write enable and read enable signals, and at least one main sense amplifier, for providing the write data signal to the local write device, receiving the data signal from the local sensor, and amplifying the received data signal for providing a read data signal to output data lines.

Sense amplifier with mini-gap architecture and parallel interconnect

A sense amplifier is provided. The sense amplifier comprises a first and second cross-coupled transistor pairs, a first and second current sources, a first digital input transistor, and a second digital input transistor. The first and second ends of the first cross-coupled transistor pair are coupled to an operating voltage, the first and second back gate ends of the first cross-coupled transistor pair are coupled to a first and second output ends respectively. The first and second back gate ends of the first cross-coupled transistor pair are coupled to a first and second output ends respectively, and the first and second ends of the first cross-coupled transistor pair are coupled to a first digital input end and second digital input end respectively.

Sense amplifier with cross-coupled transistor pair

Operations within a memory device to replace one or more selected failing memory cells with one or more repair memory cells and to correct data digits read from other failing memory cells in the memory device.

Memory device repair apparatus, systems, and methods

Improved apparatus, systems and methods, such as those for testing an error correction code (ECC) encoder/decoder for solid-state memory devices, are provided. In one or more embodiments, the improved systems and methods deliberately inject errors into memory storage areas of memory devices to test the operation of the ECC encoder/decoder.

Error-correction forced mode with M-sequence

The delay locked loop ('DLL') delay interval can be locked to stop the DLL from wasting power in unnecessarily switching to synchronize the device with the DLL is associated to the system clock. This is achieved by adding logic sensing when a DRAM device will not imminently be called upon to output data and when the device has stabilized. Waiting for the DLL delay interval to stabilize before locking the delay interval still allows the DLL to immediately and effectively resume operations when the DLL is needed to synchronize the output of the DRAM device with the system clock. The DLL delay interval can be locked, together with the DLL clock, after the DRAM device is deselected by the chip select control line, after a number of no operation commands have been received, and/or after any command issued to the DRAM device has been completed.

System for delay locked loop control that provides delay interval stabilization

Some embodiments include apparatus, systems, and methods having a voltage generator to generate a voltage, a memory cell including a storage node associated with a storage node voltage, and a power controller to provide a signal to the voltage generator such that the voltage generated by the voltage generator rises from a voltage less than a reference voltage to a voltage less than the storage node voltage, and such that the voltage generated by the voltage generator is less than or equal to the storage node voltage, at least partially in response to the apparatus entering into a mode. Other embodiments are described.

Power-off apparatus, systems, and methods

Data bits stored in memory cells are recognized by an ECC generator as data bit strings in a first direction and data bit strings in a second direction such that each data bit string in the first direction and each data bit string in the second direction share one data bit in common. The ECC controller identifies a data bit string in the first direction having more than one data bit in error based on a respective correction code in the first direction and identifies a data bit string in the second direction having more than one data bit in error based on a respective correction code in the second direction, and causes the data bit shared by the identified data bit string in the first direction and the identified data bit string in the second direction to be changed.

Memory apparatus and method using erasure error correction to reduce power consumption

An error correction circuit coupled to a plurality of memory cells in a memory device includes an error correcting code ('ECC') generator and an ECC controller. The ECC generator is coupled to the memory cells and recognizes data bits stored in the memory cells as a plurality of data bit strings in a first direction and as a plurality of data bit strings in a second direction such that each data bit string in the first direction and each data bit string in the second direction share one data bit in common. The ECC generator generates a respective correction code in the first direction for each data bit string in the first direction and also generates a respective correction code in the second direction for each data bit string in the second direction. The ECC controller is coupled to the memory cells and the ECC generator. The ECC controller identifies a data bit string in the first direction having more than one data bit in error based on the respective correction code in the first direction and identifies a data bit string in the second direction having more than one data bit in error based on the respective correction code in the second direction. The ECC controller causes the data bit shared by the identified data bit string in the first direction and the identified data bit string in the second direction to be changed from a respective existing value to a respective new value different than the respective existing value.

Apparatus, methods, and systems are disclosed, including those that are to prevent a bias voltage from rising to a higher level than a storage node voltage as the bias voltage transitions to a ground level. For example a first voltage generator may be utilized to generate a bias voltage to bias a transistor in a memory cell in a memory array. A second voltage generator may be utilized to generate an plate voltage. The memory cell may include a transistor on a substrate and a capacitor. The capacitor connects from a drain of the transistor to the plate voltage. The storage node voltage is located at the drain of the transistor. A power controller may provide an off signal to the first and second voltage generators. The bias voltage may then transition to ground from a voltage less than zero volts. The rate of the bias voltage rise to ground is such that the bias voltage is maintained at less than or equal to the storage node voltage during the transition time period.

Power off apparatus, systems, and methods

System and method for power saving delay locked loop control

Clock capturing synchronization circuitry first generates a synchronized clock signal from a reference clock signal, then captures the synchronized clock signal, and continues to output a synchronized clock signal after the reference clock signal is removed. The clock capturing synchronization circuitry also reduces input referred jitter in the synchronized clock signal.

Growing community of inventors

Meridian, ID, United States of America

Adrian J Drexler