Rambus Inc.

Inapac Technology, Inc.

Micron Technology Incorporated

Samsung Electronics Co., Ltd.

Grandis, Inc.

G-link Technology

Other

Spin Memory, Inc.

Neomagic Corporation

Aucmos Technologies Usa, Inc.

Micron Semiconductor, Inc.

Integrated Silicon Solution, (cayman) Inc.

Kilopass Technology, Inc.

Tc Lab, Inc.

Everam Technology Inc.

Adrian E Ong

Fan Ho

Paul S Zagar

Kurt D Beigel

Patrick J Mullarkey

Douglas John Cutter

Brett M Debenham

Kim M Pierce

Dien S Luong

Mark R Thomann

Nick Van Heel

Paul Fuller

Brent Keeth

Naresh Baliga

Douglas W Gorgen

Troy A Manning

Todd A Merritt

Jeffrey P Wright

Andrew J Walker

Dmytro Apalkov

Michael Amiel Shore

Hua Zheng

Dafna Beery

Dong Sik Jeong

Vladimir Nikitin

Mohamad Towfik Krounbi

Bruce Lynn Bateman

William K Waller

Xueti Tang

Brett L Williams

Chan-Kyung Kim

Alexey Vasilyevitch Khvalkovskiy

Deepraj S Puar

Xiao Luo

Yongsik Youn

Ken Waller

Sooho Cha

Richard G Egan

Charles Cheng

Byeong Cheol Na

Tim Lao

Vladimir Nitikin

Chiate Lin

A dynamic random access memory (DRAM) comprises a plurality of primary data storage elements, a plurality of redundant data storage elements, and circuitry to receive a first register setting command and initiate a repair mode in the DRAM in response to the first register setting command. The circuitry is further to receive an activation command, repair a malfunctioning row address in the DRAM, receive a precharge command, receive a second register setting command, terminate the repair mode in the DRAM in response to the second register setting command, receive a memory access request for data stored at the malfunctioning row address, and redirect the memory access request to a corresponding row address in the plurality of redundant data storage elements.

Controller to detect malfunctioning address of memory device

A magnetic memory device for storing and quickly retrieving data from an array of magnetic memory elements. The array includes a plurality of magnetic memory element such as magnetic tunnel junction elements arranged in rows and columns. A plurality of multiplexed bit lines is connected with a first end of each of the magnetic memory elements and plurality of multiplexed source lines are connected with a second end of each of the magnetic memory elements. The multiplexing allows source line current and/or bit line current to be applied to an individual column of memory elements in the array for quick retrieval of data in a Magnetic Random Access Memory (MRAM) system.

MRAM architecture with multiplexed sense amplifiers and direct write through buffers

A controller includes an internal memory to store an address and a memory control unit operatively coupled with the internal memory. The memory control unit includes logic to identify a malfunctioning address of primary data storage elements within an external memory device, the external memory device being another semiconductor device separate from the controller, store the malfunctioning address in the internal memory, and transmit, to the external memory device, a command to initiate a repair of the malfunctioning address using redundant data storage elements and an indication of an address associated with the malfunctioning address.

Methods, systems, and apparatus for reducing power consumption or signal distortions in a semiconductor device package. The semiconductor device package includes a semiconductor device, a first electric path, a second electric path, and an isolation element in the first electric path. The second electric path is electrically connected to the first electric path and a functional unit of the device. The isolation element separates an isolated portion in the first electric path from the second electric path, where the isolation element is configured to reduce current in the isolated portion when a signal is passing through the second electric path.

Isolating electric paths in semiconductor device packages

Methods, systems, and apparatus for testing semiconductor devices.

Testing fuse configurations in semiconductor devices

A magnetic memory array having a source-plane electrically connected with an array of channel selectors in two-dimensions. The array of channel selectors can be arranged in rows and columns with both the rows and columns being electrically connected with a source-plane. A memory element such as a two terminal resistive switching memory element can be electrically connected with each of the channel selectors. The source-plane can include a doped region formed in a surface of a semiconductor substrate and may also include an electrically conductive layer formed on the doped region. The use of such a planar, two-dimensional source-plane allows for greatly increased data density by eliminating the need to form separate source-line source lines for individual rows of channel selectors.

Vertical selector stt-MRAM architecture

A magnetic memory array having a source-plane electrically connected with an array of channel selectors in two-dimensions. The array of channel selectors can be arranged in rows and columns with both the rows and columns being electrically connected with a source-plane. A magnetic memory element such as a magnetic tunnel junction element can be electrically connected with each of the channel selectors. The source-plane can include a doped region formed in a surface of a semiconductor substrate and may also include an electrically conductive layer formed on the doped region. The use of such a planar, two-dimensional source-plane allows for greatly increased data density by eliminating the need to form separate source-line source lines for individual rows of channel selectors.

Vertical selector STT-MRAM architecture

A ferroelectric memory array includes (a) a driver circuit providing a first signal and a second signal; (b) word lines each providing a word line signal; and (c) memory array sections. Each memory array section may include: (a) bit lines; (b) plate line segments each associated with a corresponding one of the word line signals; (c) local plate line decoders, each local plate line decoder (i) being associated with one of the plate line segments, (ii) receiving the corresponding word line signal of the associated plate line segment, the first signal and the second signal, and (iii) providing predetermined voltages on the associated plate line segment according to the received word line signal, the first signal and the second signal; and (d) memory cells, each memory cells having one or more ferroelectric capacitor connected between one of the plate line segments and one of the bit lines. The predetermined voltages output from a local plate decoder may include a voltage of the word line signal, a power supply voltage, or one half the power supply voltage.

Ferroelectric memory array with variable plate-line architecture

A plate line segment selector circuit, coupled to a plate line segment, a plate line and a word line, may include (a) a P-channel transistor having a gate terminal connected to the plate line, a source terminal connected to the word line, and a drain terminal connected to the plate line segment; and (b) a N-channel transistor having a gate terminal connected to the plate line, a drain terminal connected to the plate line, and a source terminal connected to a ground reference voltage source. Alternatively, the plate line segment selector circuit may include: (a) a P-channel transistor having a gate terminal connected to the plate line, a source terminal connected to a predetermined voltage source, and a drain terminal; (b) a N-channel transistor having a gate terminal connected to the plate line, a source terminal connected to a ground reference voltage source, and a drain terminal; and (c) a field effect transistor having a gate terminal connected to the word line, a first drain or source terminal connected to the drain terminals of the P-channel and N-channel transistors and a second drain or source terminal connected to the plate line segment.

Ferroelectric memory array with hierarchical plate-line architecture

Systems and methods of testing integrated circuits are disclosed. A system may include a data compression component to compress data received from an integrated circuit under test at a first clock frequency, to generate compressed data. The system may also include a data output component, operatively coupled to the data compression component, to convey the compressed data to automated testing equipment at a second clock frequency.

Integrated circuit testing

Growing community of inventors

Pleasanton, CA, United States of America

Adrian E Ong