Cree Gmbh

Adolf Sch&ouml;ner

Kurt Rottner

A method for producing a crystalline layer of SiC having at least a region thereof doped with boron atoms comprises a step a) of ion implantation of boron into a layer ( ) of crystalline SiC and a step b) of heating the SiC-layer for annealing it for making the boron implanted therein electrically active. The method further comprises a step c) of implanting carbon atoms in said layer ( ) for forming carbon interstitials in excess with respect to carbon vacancies present in the SiC-layer before carrying out step b).

Growing community of inventors

Kista, Sweden

Adolf Schöner

Growing community of inventors

Kista, Sweden

Adolf Sch&ouml;ner

Adolf Schöner