Siemens Aktiengesellschaft

Siemens Solar Gmbh

Rct Solutions Gmbh

Centrotherm Photovoltaics Ag

Siemens Solar Industries International

Adolf Muenzer

Andreas Teppe

Jan Schoene

Steffen Keller

Reinhart Schade

Manfred Riermeier

Friedrich-Wilhelm Schulze

Reinhold Schlosser

Gerhard Zinke

Peter Winter

Gerhard Lehner

Mathias Hein

Robert Wieting

Heinrich Grasser

Solar cell () having a dielectric coating arranged on a back side of the solar cell () which is at least partly covered by at least one planar contact (), a boundary line () of the at least one planar contact () having at least one recess (), and method for producing same.

Solar cell having a dielectric rear face coating and method for producing same

In a method for producing a solar cell, a layer stack of dielectric layers is applied to a back of a solar cell substrate and the layer stack is heated and is held at temperatures of at least 700&#xb0; C. during a time period of at least 5 minutes. The novel solar cell has a layer stack of dielectric layers on its back. At least one of the dielectric layers of the layer stack is densified so that its resistivity to firing-through of pastes with glass components is enhanced.

Solar cell having dielectric back reflective coating and method for the production thereof

A solar cell has electrical conductors applied on a pattern of electric contacts on a front surface and extending transversely relative thereto with a portion projecting beyond the edge of the solar cell. The formation of the electrical pattern includes at least two elongated portions interconnected by a return portion which extends beyond the one edge. This return portion provides a stiffening suitable for reliable interconnection to an additional solar cell to achieve a connection of two conductors in the projecting region.

Solar cell with a connecting structure

A simple connection for a solar cell module is composed of a soldered-on, stud-shaped terminal element that is fixed with a retainer element plugged thereover and glued to the back side of the solar module. The projection of the end of the terminal element comprises a connection for a cable.

Electrical terminal element for solar modules

A method for the passivation of crystal defects in polycrystalline or amorphous silicon material using a temperature treatment step in a hydrogen-containing atmosphere the method results in favorable diode properties and favorable passivation properties in amorphous or, respectively, polycrystalline silicon material in a simple manner. Hydrogen-oxygen compounds are reduced at the surface of the silicon material, creating atomic hydrogen that diffuses into the silicon material.

Method for the passivation of crystal defects in polycrystalline silicon

A process for the passivation of crystal defects or grain boundaries or internal grain defects or surfaces in an electrically conductive material in a plasma, where the passivation is carried out by the influence of suitable ions on the electrically conductive material to facilitate a shorter process time and lower stress on the electrically conductive material. A high-frequency gas discharge plasma is acted upon by a superimposed d.c. voltage which serves to accelerate the ions, suitable to carry out the passivation, towards the electrically conductive material.

Process for the passivation of crystal defects

Growing community of inventors

Unterschleissheim, Germany

Adolf Muenzer