Infineon Technologies Ag

Infineon Technologies Austria Ag

Adolf Koller

Horst Theuss

Gunther Mackh

Franco Mariani

Ralf Otremba

Klaus Elian

Josef Hoeglauer

Helmut Strack

Harald Seidl

Reinhard Ploss

Werner Kroeninger

Gerhard Leschik

Hans-Joachim Schulze

Anton Mauder

Carsten Ahrens

Markus Brunnbauer

Manfred Schneegans

Andre Brockmeier

Mathias Vaupel

Klaus Pressel

Gerald Lackner

Manfred Kotek

Jochen Mueller

Martin Petz

Katharina Umminger

Abdul Rahman Mohamed

Stefan Martens

Maria Heidenblut

Uwe Schindler

Giuseppe Miccoli

Bernhard Drummer

Sebastian Bernrieder

Jayachandran Bhaskaran

Anatoly Sotnikov

Jens Arkenau

Stephan Helbig

Florian Sedlmeier

A method includes producing a semiconductor wafer. The semiconductor wafer includes a plurality of microelectromechanical system (MEMS) semiconductor chips, wherein the MEMS semiconductor chips have MEMS structures arranged at a first main surface of the semiconductor wafer, a first semiconductor material layer arranged at the first main surface, and a second semiconductor material layer arranged under the first semiconductor material layer, wherein a doping of the first semiconductor material layer is greater than a doping of the second semiconductor material layer. The method further includes removing the first semiconductor material layer in a region between adjacent MEMS semiconductor chips. The method further includes applying a stealth dicing process from the first main surface of the semiconductor wafer and between the adjacent MEMS semiconductor chips.

Method with stealth dicing process for fabricating MEMS semiconductor chips

An apparatus for expanding chips of a wafer, wherein the apparatus comprises an expansion mechanism configured for expanding a tape on which the chips of the wafer are arranged, and an inflation mechanism configured for inflating at least a part of an edge portion of the tape so that part of the edge portion approaches a frame.

Wafer expander

According to various embodiments, a method for processing a carrier may include: forming an arrangement of defects in the carrier, wherein a surface region of the carrier is disposed over the arrangement of defects at a first surface of the carrier, wherein the arrangement of defects is configured to generate a crack structure extending from the arrangement of defects into the surface region; partially removing the carrier to remove the arrangement of defects; and separating the surface region of the carrier into a plurality of surface region portions along the crack structure.

Carrier arrangement and method for processing a carrier by generating a crack structure

A circumferential embedded structure is formed by laser irradiation in a semiconductor substrate, which is of a semiconductor material. The embedded structure includes a polycrystalline structure of the semiconductor material, and surrounds a central portion of a semiconductor die. The semiconductor die including the embedded structure is separated from the semiconductor substrate.

Semiconductor device with circumferential structure and method of manufacturing

Various embodiments provide a method of detaching semiconductor material from a carrier, wherein the method comprises providing a carrier having attached thereto a layer of semiconductor material, wherein the layer comprises an edge portion; and guiding an air stream onto the edge portion of the layer of semiconductor material.

Method of detaching semiconductor material from a carrier and device for performing the method

An integrated circuit includes a leadframe, and a die having a top surface, a bottom surface, and a plurality of perimeter sides and including at least one magnetic field sensor element disposed proximate to the top surface, wherein the bottom surface is bonded to the leadframe. A molded magnetic material encapsulates the die and at least a portion of the leadframe, and provides a magnetic field substantially perpendicular to the top surface of the die. A non-magnetic material is disposed between the die and the molded magnetic material at least along perimeter sides of the die intersecting a lateral magnetic field component which is parallel to the top surface of the die.

GMR sensor within molded magnetic material employing non-magnetic spacer

Methods and apparatuses are provided where a parting agent is applied to at least one portion of a substrate. The at least one portion of the substrate is removed from a carrier.

Substrate removal from a carrier

A method of removing a reinforcement ring from a wafer is described. The method includes forming a ring-shaped recess in a first surface of the wafer and separating the reinforcement ring from an inner region of the wafer along the ring-shaped recess.

Removal of a reinforcement ring from a wafer

A method for manufacturing a plurality of chips comprises the step of providing a wafer comprising a plurality of chip areas separated by one or more dicing lines, wherein the chip areas are arranged on a first main surface, the step of providing a laser absorption layer on a second main surface opposite to the first main surface and the step of providing a backside metal stack on the laser absorption layer. After that a laser light is applied to the laser absorption layer along the dicing lines before the chips are singulated along the dicing lines by using stealth dicing.

Chip comprising a backside metal stack

A chip includes a dielectric layer and a fill structure in the dielectric layer, wherein the fill structure extends along a dicing edge of the chip, with the fill structure abutting the dicing edge.

Chip comprising a fill structure

In one embodiment, a method of forming a semiconductor device comprises forming a groove on and/or over a first side of a substrate. A dicing layer is formed from a second side of the substrate using a laser process. The second side is opposite the first side. The dicing layer is disposed under the groove within the substrate. The substrate is singulated through the dicing layer.

Singulation processes

Exemplary embodiments of a method for producing a semiconductor component having a polycrystalline semiconductor body region are disclosed, wherein the polycrystalline semiconductor body region is produced between the first and second surfaces of the semiconductor body in a semiconductor component section, wherein an electromagnetic radiation having a wavelength of at least 1064 nm is introduced into the semiconductor body in a manner focused onto a position in the semiconductor component section of the semiconductor body and wherein the power density of the radiation at the position is less than 1&#xd7;10W/cm.

Method for producing a semiconductor component

In accordance with an embodiment of the present invention, a semiconductor device is manufactured by arranging a plurality of semiconductor devices on a frame with an adhesive foil. The plurality of semiconductor devices is attached to the adhesive foil. The plurality of semiconductor devices is removed from the frame with the adhesive foil using a carbon dioxide snow jet and/or a laser process.

Separation of semiconductor devices from a wafer carrier

A method of dicing a semiconductor wafer includes forming a layer stack on a first main surface of a substrate. The layer stack and a portion of the substrate are etched according to a pattern defining an intended dicing location to obtain a trench structure. The substrate is irradiated with a laser beam to locally modify the substrate between a bottom of the trench structure and a second main surface of the substrate opposite to the first main surface.

Growing community of inventors

Wuppertal, Germany

Adolf Koller