Ucl Business Plc

Adnan Mehonic

Anthony Joseph Kenyon

Wing Ng

Anthony Kenyon

Anthony J Kenyon

A method for manufacturing a memory resistor device. A first layer of a dielectric material is deposited onto a first electrode. A subsection of the first layer of the dielectric material is removed to expose one or more edges of the dielectric material and a second layer of the dielectric material is deposited to create one or more boundaries between the one or more edges of the first layer of the dielectric material and the second layer of the dielectric material. A second electrode is provided, wherein the one or more boundaries between the one or more edges of the first layer of the dielectric material and the second layer of the dielectric material extend at least partially from the first electrode to the second electrode.

Method for manufacturing a memory resistor device

A switching resistor comprises a dielectric layer disposed between a first electrode layer and a second electrode layer, the switching resistor having a high resistance state and a low resistance state. The switching resistor is responsive to a voltage bias, applied between the first electrode layer and the second electrode layer, wherein the voltage bias exceeds a threshold to switch from the high resistance state to the low resistance state. The switching resistor is sensitive to photo-illumination to reduce said threshold.

Light-activated switching resistor, an optical sensor incorporating a light-activated switching resistor, and methods of using such devices

A switching resistor has a low resistance state and a high resistance state. The switching resistor comprises a dielectric layer disposed between a first electrode and a second electrode. The switching resistor further comprises a textured boundary surface between the first electrode and the dielectric layer. The textured boundary surface promotes the formation of a conductive pathway in the dielectric layer between the first electrode and the second electrode.

Switching resistor and method of making such a device

This invention relates to memory resistors, arrays of memory resistors and a method of making memory resistors. In particular, this invention relates to memory resistors having an on state and an off state, comprising: (a) a first electrode; (b) a second electrode; (c) a dielectric layer disposed between the first and second electrodes; wherein the dielectric layer comprises nanoparticles of semiconductor material, and wherein in the on state nanoparticles form at least one conductive filament encapsulated by the dielectric layer, thereby providing a conductive pathway between the first electrode and the second electrode.

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London, United Kingdom

Adnan Mehonic