King Abdullah University of Science and Technology

Aditya Prabaswara

Boon Siew Ooi

Tien Khee Ng

Bilal Janjua

Mohamed Ebaid Abdrabou Hussein

Jung-Wook Min

Jungwook Min

A method of forming an optoelectronic semiconductor device involves providing an amorphous substrate. A transparent and conductive oxide layer is deposited on the amorphous substrate. The transparent and conductive oxide layer is annealed to form an annealed transparent and conductive oxide layer having a cubic-oriented and/or rhombohedral-oriented surface. A nanorod array is formed on the cubic-oriented and/or rhombohedral-oriented surface of the annealed transparent and conductive oxide layer. The annealing of the transparent conductive oxide layer and the formation of the nanorod array are performed using molecular beam epitaxy (MBE). The nanorods of the nanorod array comprise a group-III material and are non-polar.

Optoelectronic semiconductor device with nanorod array

A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.

Integration of III-Nitride nanowire on transparent conductive substrates for optoelectronic and electronic devices

Integration of III-nitride nanowire on transparent conductive substrates for optoelectronic and electronic devices

A system and method providing correlated color temperature-tunable (CCT-tunable) white light using a laser diode(s) in conjunction with a III-Nitride nanowires-based LED element grown on a semi-transparent substrate. The tunability spans across yellow, amber, and red wavelengths and can be implemented by current injection. The current-dependent broad wavelength tunability enables control of wide range of CCT values (intensity, peak wavelength, and spectral coverage). The broad coverage in the yellow-amber-red color regime mimics that of a passive yellow phosphor, while the injection of current into the LED element defines an active phosphor element. The semi-transparent active phosphor element allows direct transmission of light from a laser diode(s) for achieving extreme wide tunability of CCT.

Color-tunable transmission mode active phosphor based on III-Nitride nanowire grown on transparent substrate

Color-tunable transmission mode active phosphor based on III-nitride nanowire grown on transparent substrate

Growing community of inventors

Thuwal, Saudi Arabia

Aditya Prabaswara