Fujitsu Corporation

Adarsh Sandhu

Toshio Fujii

A thin film magnetic head includes a layered semiconductor body formed of a quantum well layer sandwiched by first and second barrier layers, wherein at least one of the first and second barrier layers includes therein a delta-doped layer that shields the quantum well layer from a surface depletion region extending from the surface of the barrier layer.

Hall-effect magnetic sensor and a thin-film magnetic head using such a

A method of growing a plurality of epitaxial layers each having a property which is different from each other simultaneously on a common substrate comprises steps of forming at least a first crystal surface and a second crystal surface which are crystallographically non-equivalent to each other on the substrate, introducing particles comprising constituent elements of the epitaxial layers into a region in the vicinity of the substrate, the particles including at least metal-organic molecules containing one of the elements constituting the epitaxial layers, decomposing the metal-organic molecules such that the layer constituting element therein is released as a result of the decomposition, and depositing the aforesaid particles including the element released by the decomposition of the metal-organic molecules on the first and second crystal surfaces so that a first epitaxial layer and a second epitaxial layer, respectively differing in properties from each other, are grown on respective the first and second crystal surfaces, the step of deposition being performed such that the growth of the first and second epitaxial layers is controlled by the decomposition of the metal-organic molecule.

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Yokohama, Japan

Adarsh Sandhu