Sony Semiconductor Solutions Corporation

Adarsh Basavalingappa

Frederick T Brady

Sungin Hwang

Taisuke Suwa

Michiel Timmermans

Yoshiaki Tashiro

Cristian Tivarus

Jeongsoo Han

A sensor chip including a resistor and a backside illuminated single photon avalanche diode (SPAD) that is connected to the resistor; and a sensor including a sensor chip with a resistor and a backside illuminated SPAD that is connected to the resistor. The backside illuminated SPAD including an anode, a cathode, and a multiplication structure.

Backside illuminated single photon avalanche diode

An imaging device includes a pixel including a photoelectric conversion region, a first transfer transistor coupled to the photoelectric conversion region, a first floating diffusion, a second floating diffusion, a second transfer transistor coupled between the first floating diffusion and the second floating diffusion to control access to the second floating diffusion, a third transfer transistor coupled to the photoelectric conversion region, a third floating diffusion coupled, a fourth floating diffusion, and a fourth transfer transistor coupled between the third floating diffusion and the fourth floating diffusion to control access to the fourth floating diffusion. The imaging device includes a first wiring layer including a first wiring connected to the second floating diffusion, a second wiring connected to the fourth floating diffusion, and a third wiring connected to ground and capacitively coupled with the first wiring and the second wiring.

Capacitance matched metal wirings in dual conversion gain pixels

A pixel array includes a plurality of pixels. Each pixel includes a photoelectric conversion region that converts incident light into electric charge, and a charge transfer section coupled to the photoelectric conversion region and having line symmetry along a first axis in a plan view. The charge transfer section includes a first transfer transistor coupled to a first floating diffusion and the photoelectric conversion region and located at a first side of the photoelectric conversion region, and a second transfer transistor coupled to a second floating diffusion and the photoelectric conversion region and located at the first side of the photoelectric conversion region.

Imaging devices with gated time-of-flight pixels with fast charge transfer

An imaging device includes a first pixel including a first photoelectric conversion region and a first amplification transistor, a second pixel adjacent the first pixel and including a second photoelectric conversion region and a second amplification transistor, and a first contact coupled to the first amplification transistor and the second amplification transistor, and that receives a power supply signal for the first amplification transistor and the second amplification transistor.

Growing community of inventors

Fairport, NY, United States of America

Adarsh Basavalingappa