Osram Sylvania Inc.

Osram Opto Semiconductors Gmbh

Adam Scotch

David Hamby

John H Selverian

Alan Piquette

Darshan Kundaliya

Maxim N Tchoul

Richard Speer

Alan Lenef

Gertrud Kraeuter

Walter Peter Lapatovich

Gertrud Kräuter

Madis Raukas

Jeffery J Serre

Sridharan Venk

Thomas Dreeben

George C Wei

Yi Zheng

William D Koenigsberg

Victor E Perez

Kailash C Mishra

James A Avallon

Matthew Stough

Kenneth Grossman

Matthias Loster

Dave Hamby

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of &#x2264;30 &#x3bc;m.

Optoelectronic component and method for producing an optoelectronic component

The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangement produced under step B2) to produce a second layer having a filler mixed in the cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, wherein the produced conversion element is formed as a plate having a thickness of at least 100 &#x3bc;m.

Methods for producing a conversion element and an optoelectronic component

An optoelectronic component includes a semiconductor chip that is able to emit radiation having a wavelength of 400 nm to 490 nm, a conversion element including a reactive polysiloxane matrix material, a wavelength converting phosphor and filler nanoparticles, wherein the filler nanoparticles have a diameter of smaller than 15 nm and modify the refractive index and yield a mixture when added to the reactive polysiloxane matrix material.

Optoelectronic component having a conversation element with a high refractive index

A wavelength conversion element comprising a crosslinked matrix and at least one phosphor dispersed in said matrix, wherein said matrix is made from a precursor material comprising a precursor having a structure chosen from one of the generic formulae is provided. Further, a light emitting device comprising a wavelength conversion element and a method for producing a wavelength conversion element are provided.

Wavelength conversion element, light emitting device and method for producing a wavelength conversion element

There is herein described a ceramic wavelength converter having a high reflectivity reflector. The ceramic wavelength converter is capable of converting a primary light into a secondary light and the reflector comprises a reflective metal layer and a dielectric buffer layer between the ceramic wavelength converter and the reflective metal layer. The buffer layer is non-absorbing with respect to the secondary light and has an index of refraction that is less than an index of refraction of the ceramic wavelength converter. Preferably the reflectivity of the reflector is at least 80%, more preferably at least 85% and even more preferably at least 95% with respect to the secondary light emitted by the converter.

Ceramic wavelength converter having a high reflectivity reflector

A dual solder layer for fluidic self assembly, an electrical component substrate, and method employing same is described. The dual solder layer comprises a layer of a self-assembly solder disposed on a layer of a base solder which is disposed on the solder pad of an electrical component substrate. The self-assembly solder has a liquidus temperature less than a first temperature and the base solder has a solidus temperature greater than the first temperature. The self-assembly solder liquefies at the first temperature during a fluidic self assembly method to cause electrical components to adhere to the substrate. After attachment, the substrate is removed from the bath and heated so that the base solder and self-assembly solder combine to form a composite alloy which forms the final electrical solder connection between the component and the solder pad on the substrate.

Dual solder layer for fluidic self assembly and electrical component substrate and method employing same

A flexible circuit board is described that includes a flexible substrate, at least one ridge defining a flexion zone and a component mounting area. The flexion zone acting to dissipate at least a portion of a force applied to the substrate, so as to insulate the component mounting area from the force. Light sources using such flexible circuit boards and methods for making such circuit boards are also described.

Flexible circuit board for electronic applications, light source containing same, and method of making

Techniques are disclosed for attaching SMDs to a flexible substrate using conductive epoxy bond pads. Each bond pad includes a set of elongated strips of conductive epoxy that are applied and cured onto the flexible substrate in an adjacent and parallel fashion. The bond pads are used to attach SMDs to the flexible substrate and also provide the conductive contacts for a printed circuit. A circuit may be printed on the flexible substrate using conductive ink that partially covers the bond pads, leaving a portion of the pads exposed. A second layer or strip of conductive epoxy may be applied over and across the exposed portions of the bond pad strips in order to attach an SMD. The number, size, and orientation of the epoxy bond pad strips may be determined by the amount of bending the flexible substrate is expected to withstand and/or the orientation of the bend.

Techniques for adhering surface mount devices to a flexible substrate

Techniques and architecture are disclosed for providing a modular lighting system/luminaire having an integrated heat sink assembly. In some cases, the system/luminaire may comprise a plurality of individual modular light sources which have been operatively coupled with one another. In some instances, a modular light source may include one or more light engines (e.g., light emitting diodes or LEDs) which have been operatively coupled with an individual heat sink module. When assembled, the plurality of heat sink modules may define, in the aggregate, a plurality of heat conduits which dissipate thermal energy from the light engines by convective heat transfer. Also, in some cases, the heat sink modules may be electrically isolated from one another, allowing for the heat sink assembly itself, in part or in whole, to function as part of the desired circuit.

Modular lighting techniques

Systems and methods for protecting electrical components such as light emitting diodes are described. In some embodiments, electrical components are protected from high level electrostatic discharge ('ESD') events by a circuit board that provides an intrinsic level of ESD protection. At the same time, such electrical components are protected against low level ESD events by one or more diodes that are electrically coupled thereto. The one or more diodes may be thin film diodes comprising at least one layer of p-type semiconductive material and at least one layer of n-type semiconductive material. Devices including ESD protection and methods for manufacturing such devices are also described.

Electrostatic discharge protection for electrical components, devices including such protection and methods for making the same

The present disclosure is directed to orientation-independent device configuration and assembly. An electronic device may comprise conductive pads arranged concentrically on a surface of the device. The conductive pads on the device may mate with conductive pads in a device location in circuitry. Example conductive pads may include at least a first circular conductive pad and a second ring-shaped conductive pad arranged to concentrically surround the first conductive pad. The concentric arrangement of the conductive pads allows for orientation-independent placement of the device in the circuitry. In particular, the conductive pads of the device will mate correctly with the conductive pads of the circuitry regardless of variability in device orientation. In one embodiment, the device may also be configured for use with fluidic self-assembly (FSA). For example, a device housing may be manufactured with pockets that cause the device to attain neutral buoyancy during manufacture.

Orientation-independent device configuration and assembly

A wavelength converter for an LED is described that comprises a substrate of monocrystalline garnet having a cubic crystal structure, a first lattice parameter and an oriented crystal face. An epitaxial layer is formed directly on the oriented crystal face of the substrate. The layer is comprised of a monocrystalline garnet phosphor having a cubic crystal structure and a second lattice parameter that is different from the first lattice parameter wherein the difference between the first lattice parameter and the second lattice parameter results in a lattice mismatch within a range of &#xb1;15%. The strain induced in the phosphor layer by the lattice mismatch shifts the emission of the phosphor to longer wavelengths when a tensile strain is induced and to shorter wavelengths when a compressive strain is induced. Preferably, the wavelength converter is mounted on the light emitting surface of a blue LED to produce an LED light source.

Wavelength converter for an LED and LED containing same

A wavelength-converting structure for a wavelength-converted light emitting diode (LED) assembly. The wavelength-converting structure includes a thin film structure having a non-uniform top surface. The non-uniform top surface is configured increase extraction of light from the top surface of a wavelength-converting structure.

LED wavelength-converting structure including a thin film structure

A light emitting diode (LED) lighting system including a lighting apparatus comprising at least one printed circuit board having an array of light emitting diode (LED) chips mounted thereto, the printed circuit board including a segmented conductor pathway configured to electrically couple at least a portion of the array of LED chips, and a portion of the printed circuit board forming a card edge connector, the card edge connector including a portion of the segmented conductor pathway which provides an electrical contact configured to electrically couple the segmented conductor pathway to a power source.

Growing community of inventors

Amesbury, MA, United States of America

Adam Scotch