Globalfoundries U.S. Inc.

Adam S Rosenfeld

Yusheng Bian

Shesh Mani Pandey

George Robert Mulfinger

Francis Afzal

Bob Mulfinger

Md Nasir Uddin Bhuyian

Selina A Mala

Disclosed are a semiconductor structure and method of forming the structure. The structure has a semiconductor layer. A gate structure is located on the semiconductor layer. The gate structure has a sidewall spacer having a first section on the semiconductor layer and positioned laterally adjacent to the gate structure and further having a second section above and wider than the first section and positioned laterally adjacent the gate structure. A source/drain region is on the semiconductor layer and positioned laterally adjacent to the first section and the second section of the sidewall spacer.

Structure and method of forming spacers on unfaceted raised source/drain regions

Structures including a waveguide core and methods of fabricating a structure including a waveguide core. The structure comprises a substrate, a waveguide core, and a grating disposed in a vertical direction between the waveguide core and the substrate. The grating includes a first plurality of layers and a second plurality of layers that alternate in the vertical direction with the first plurality of layers. The first plurality of layers comprise a first material having a first refractive index, and the second plurality of layers comprise a second material having a second refractive index that is greater than the first refractive index.

Vertical grating structures placed between a waveguide core and a substrate

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Ballston Spa, NY, United States of America

Adam S Rosenfeld