Uchicago Argonne, LLC

Massachusetts Institute of Technology

Illinois Institute of Technology

Adam S Hock

Richard Royce Schrock

Jeffrey T Miller

Theodore R Krause

Neil M Schweitzer

Bo Hu

Guanghui Zhang

Yunjie Xu

Christopher L Marshall

Peter C Stair

Alex B Martinson

Matthew Scott Weimer

Jeffrey Camacho Bunquin

Robert McCarthy

Michael James Foody

The present disclosure describes a method of a thermal atomic layer deposition (ALD) process of depositing a ternary gallium oxide thin film, which includes gallium, a metal element other than gallium, and oxygen. The disclosed method starts with providing a reactive surface. Next, one or more ALD growth cycles are conducted. Each ALD growth cycle includes one or more first ALD sub-cycles and one or more second ALD sub-cycles. Herein, conducting each first ALD sub-cycles includes applying a pulse of a first metal precursor and a pulse of water sequentially, where the first metal precursor is a gallium compound. Conducting each second ALD sub-cycles includes applying a pulse of a second metal precursor and a pulse of water sequentially, where the second metal precursor includes the metal element other than gallium.

Thermal atomic layer deposition of ternary gallium oxide thin films

The present invention relates generally to catalysts and methods for use in olefin production. More particularly, the present invention relates to novel amorphously supported single-center, Lewis acid metal ions and use of the same as catalysts.

Selective alkane activation with single-site atoms on amorphous support

Methods, compositions, and articles of manufacture for alkane activation with single- or bi-metallic catalysts on crystalline mixed oxide supports.

Alkane activation with single and bimetallic catalysts

A multimetallic catalyst having a substrate, intermediate layer and catalyst layer. The catalyst exhibits selectivity greater than 90% and a conversion rate of greater than 30%.

Multimetallic catalysts

Alkane activation with single and bi-metallic catalysts

A method for synthesizing an In(III) N,N'-diisopropylacetamidinate precursor including cooling a mixture comprised of diisopropylcarbodiimide and diethyl ether to approximately &#x2212;30&#xb0; C., adding methyllithium drop-wise into the mixture, allowing the mixture to warm to room temperature, adding indium(III) chloride as a solid to the mixture to produce a white solid, dissolving the white solid in pentane to form a clear and colorless solution, filtering the mixture over a celite plug, and evaporating the solution under reduced pressure to obtain a solid In(III) N,N&#x2032;-diisopropylacetamidinate precursor. This precursor has been further used to develop a novel atomic layer deposition technique for indium sulfide by dosing a reactor with the precursor, purging with nitrogen, dosing with dilute hydrogen sulfide, purging again with nitrogen, and repeating these steps to increase growth.

Oxygen-free atomic layer deposition of indium sulfide

The present invention provides methods for the synthesis of catalysts and precursors thereof. Methods of the invention may comprise combining a catalyst precursor and at least one ligand to generate a catalytically active species, often under mild conditions and in high yields. In some cases, a wide variety of catalysts may be synthesized from a single catalyst precursor. Methods of the invention may also include the preparation of catalysts which, under reaction conditions known in the art, may have been difficult or impossible to prepare and/or isolate due to, for example, steric crowding at the metal center. The present invention also provides catalyst compositions, and precursors thereof, which may be useful in various chemical reactions including olefin metathesis. In some cases, methods of the invention may reduce the number of synthetic and purification steps required to produce catalysts and/or other reaction products, as well as reducing time, cost, and waste production.

Olefin metathesis catalysts and related methods

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Chicago, IL, United States of America

Adam S Hock