Applied Materials, Inc.

Adam Marc McClure

Paul R McHugh

Gregory J Wilson

Eric J Bergman

John Lee Klocke

Kyle Moran Hanson

Nolan Layne Zimmerman

Mikael R Borjesson

Deepak Saagar Kalaikadal

Paul Van Valkenburg

Michael Windham

Randy Harris

Thomas H Oberlitner

Marvin L Bernt

Richard W Plavidal

Brian Aegerter

Bridger Earl Hoerner

Andrew Anten

A system may include a first semiconductor processing station configured to deposit a material on a first semiconductor wafer, a second semiconductor processing station configured perform measurements indicative of a thickness of the material after the material has been deposited on the first semiconductor wafer, and a controller. The controller may be configured to receive the measurements from the second station; provide an input based on the measurements to a trained model that is configured to generate an output that adjusts an operating parameter of the first station such that the thickness of the material is closer to a target thickness; and causing the first station to deposit the material on a second wafer using the operating parameter as adjusted by the output.

Parameter adjustment model for semiconductor processing chambers

An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.

Electroplating system

Methods of wetting a semiconductor substrate may include forming a controlled atmosphere in a processing chamber housing the semiconductor substrate. The semiconductor substrate may define a plurality of features, which may include vias. The methods may include flowing a wetting agent into the processing chamber. A chamber pressure may be maintained below about 100 kPa. The methods may also include wetting the plurality of features defined in the substrate.

Systems and methods for wetting substrates

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Kalispell, MT, United States of America

Adam Marc McClure