Applied Materials, Inc.

Varian Semiconductor Equipment Associates, Inc.

Adam M McLaughlin

Craig Richard Chaney

Jordan B Tye

Alexander S Perel

Graham Wright

Neil J Bassom

David P Sporleder

Joshua M Abeshaus

Jay S Johnson

Ori Noked

Suren Madunts

Alicia Chen

Diana C Gronski

James A Sargent

An insulator that has a lattice is disclosed. The insulator may have a shaft with two ends. The lattice may be disposed on the outer surface of the shaft. In some embodiments, one or more sheaths are used to cover portions of the shaft. A lattice may also be disposed on the inner wall and/or outer walls of the sheaths. The lattice serves to increase the tracking length between the two ends of the shaft. This results in longer times before failure. This insulator may be used in an ion implantation system to physically and electrically separate two components.

Lattice based voltage standoff

An insulator that has a helical protrusion spiraling around the shaft is disclosed. A lip is disposed on the distal end of the helical protrusion, creating regions on the shaft that are shielded from material deposition by the lip. By proper sizing of the threads, the helical protrusion and the lip, the line-of-sight to the interior wall of the shaft can be greatly reduced. This results in longer times before failure. This insulator may be used in an ion implantation system to physically and electrically separate two components.

Helical voltage standoff

An ion source that may be used to introduce a dopant material into the arc chamber is disclosed. A component containing the dopant material is disposed in the path of an etching gas, which also enters the arc chamber. In some embodiments, the dopant material is in liquid form, and the etching gas travels through the liquid. In other embodiments, the dopant material is a solid material. In some embodiments, the solid material is formed as a porous structure, such that the etching gas flows through the solid material. In other embodiments, one or more components of the ion source are manufactured using a material that includes the dopant material, such that the etching gas etches the component to release the dopant material.

System and method for introducing aluminum to an ion source

An ion source for extracting a ribbon ion beam with improved height uniformity is disclosed. Gas nozzles are disposed in the chamber proximate the extraction aperture. The gas that is introduced near the extraction aperture serves to shape the ribbon ion beam as it is being extracted. For example, the height of the ribbon ion beam may be reduced by injecting gas above and below the ion beam so as to compress the extracted ion beam in the height direction. In some embodiments, the feedgas is introduced near the extraction aperture. In other embodiments, a shield gas, such as an inert gas, is introduced near the extraction aperture.

Ion source gas injection beam shaping

Thermally isolated captive features disposed in various components of an ion implantation system are disclosed. Electrodes, such as repellers and side electrodes, may be constructed with a captive feature, which serves as the electrode stem. The electrode stem makes minimal physical contact with the electrode mass due to a gap disposed in the interior cavity which retains the flared head of the electrode stem. In this way, the temperature of the electrode mass may remain higher than would otherwise be possible as conduction is reduced. Further, this concept can be applied to workpiece holders. For example, a ceramic platen is manufactured with one or more captive fasteners which are used to affix the platen to a base. This may minimize the thermal conduction between the platen and the base, while providing an improved mechanical connection.

Thermally isolated captive features for ion implantation systems

A system for extending the life of a repeller in an IHC ion source is disclosed. The system includes an IHC ion source wherein the back surface of the repeller has been shaped to reduce the possibility of electrical shorts. The separation distance between the back surface of the repeller and the chamber wall behind the repeller is increased along its outer edge, as compared to the separation distance near the center of the repeller. This separation distance reduces the possibility that deposited material will flake and short the repeller to the chamber wall. Further, in certain embodiments, the separation distance between the back surface of the repeller and the chamber wall near the center of the repeller is unchanged, so as to minimize the flow of gas that exits from the chamber. The back surface of the repeller may be tapered, stepped or arced to achieve these criteria.

Shaped repeller for an indirectly heated cathode ion source

An ion source having a thermally isolated repeller is disclosed. The repeller comprises a repeller disk and a plurality of spokes originating at the back surface of the repeller disk and terminating in a post. In certain embodiments, the post may be hollow through at least a portion of its length. The use of spokes rather than a central stem may reduce the thermal conduction from the repeller disk to the post. By incorporating a hollow post, the thermal conduction is further reduced. This configuration may increase the temperature of the repeller disk by more than 100&#xb0; C. In certain embodiments, radiation shields are provided on the back surface of the repeller disk to reduce the amount of radiation emitted from the sides of the repeller disk. This may also help increase the temperature of the repeller. A similar design may be utilized for other electrodes in the ion source.

Thermally isolated repeller and electrodes

A system for reducing clogging and deposition of feed gas on a gas tube entering an ion source chamber is disclosed. To lower the overall temperature of the gas tube, a gas bushing, made of a thermally isolating material, is disposed between the ion source chamber and the gas tube. The gas bushing is made of a thermally isolating material, such as titanium, quartz, boron nitride, zirconia or ceramic. The gas bushing has an inner channel in fluid communication with the ion source chamber and the gas tube to allow the flow of feed gas to the ion source chamber. The gas bushing may have a shape that is symmetrical, allowing it to be flipped to extend its useful life. In some embodiments, the gas tube may be in communication with a heat sink to maintain its temperature.

Ion source thermal gas bushing

The present disclosure describes a method and apparatus for determining whether components in a semiconductor manufacturing system are authorized for use in that system. By embedding an identification feature in the component, it is possible for a controller to determine whether that component is qualified for use in the system. Upon detection of an unauthorized component, the system may alert the user or, in certain embodiments, stop operating of the system. This identification feature is embedded in a component by using an additive manufacturing process that allows the identification feature to be embedded in the component without subjecting the identification feature to extreme temperatures.

Embedded features for interlocks using additive manufacturing

A system that utilizes a component that controls thermal gradients and the flow of thermal energy by variation in density is disclosed. Methods of fabricating the component are also disclosed. The component is manufactured using additive manufacturing. In this way, the density of different regions of the component can be customized as desired. For example, a lattice pattern may be created in the interior of a region of the component to reduce the amount of material used. This reduces weight and also decreases the thermal conduction of that region. By using low density regions and high density regions, the flow of thermal energy can be controlled to accommodate the design constraints.

Varied component density for thermal isolation

A foil liner comprising a plurality of foil layers is disclosed. The foil layers may each be an electrically conductive material that are stacked on top of each other. The spacing between adjacent foil layers may create a thermal gradient such that the temperature of the plasma is hotter than the temperature of the ion source chamber. In other embodiments, the foil layers may be assembly to sink the heat from the plasma so that the plasma is cooler than the temperature of the ion source chamber. In some embodiments, gaps or protrusions are disposed on one or more of the foil layers to affect the thermal gradient. In certain embodiments, one or more of the foil layers may be constructed of an insulating material to further affect the thermal gradient. The foil liner may be easily assembled, installed and replaced from within the ion source chamber.

Foil sheet assemblies for ion implantation

A system and method for varying the temperature of a faceplate for an ion source is disclosed. The faceplate is held against the chamber walls of the ion source by a plurality of fasteners. These fasteners may include tension springs or compression springs. By changing the length of the tension spring or compression spring when under load, the spring force of the spring can be increased. This increased spring force increases the compressive force between the faceplate and the chamber walls, creating improved thermal conductivity. In certain embodiments, the length of the spring is regulated by an electronic length adjuster. This electronic length adjuster is in communication with a controller that outputs an electrical signal indicative of the desired length of the spring. Various mechanisms for adjusting the length of the spring are disclosed.

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Merrimac, MA, United States of America

Adam M McLaughlin