1366 Technologies Inc.

Massachusetts Institute of Technology

Cubicpv Inc.

Adam M Lorenz

Emanuel Michael Sachs

Ralf Jonczyk

G D Stephen Hudelson

Richard Lee Wallace, Jr

Eerik Torm Hantsoo

Samuel M Allen

Brian Kernan

Richard L Wallace, Jr

Gd Stephen Hudelson

Brian D Kernan

Richard L Wallace

G D Hudelson

A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.

Methods for creating a semiconductor wafer having profiled doping and wafers and solar cell components having a profiled field, such as drift and back surface

A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant cannot enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.

A pressure differential can be applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential can allow release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted through the thickness of the forming wafer. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet can allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

Apparati for fabricating thin semiconductor bodies from molten material

A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

Selected methods for efficiently making thin semiconductor bodies from molten material for solar cells and the like

Methods for efficiently making thin semiconductor bodies from molten material for solar cells and the like

A steel powder metal skeleton is infiltrated with an infiltrant composition similar to the skeleton, with an additional agent that depresses the melting point of the infiltrant relative to the skeleton. Infiltration is driven primarily by capillary pressure. The powder and infiltrant compositions differ primarily only in a higher concentration of a melting point depressant agent 'MPD' in the infiltrant. Carbon (C) and silicon (Si) and several other elements can be elements in an MPD, either alone or in combination. Certain steel target compositions are such that a complementary infiltrant, and skeleton can be chosen such that a skeleton will remain solid at an infiltration temperature at which the infiltrant can be melted and fully infiltrated, and further where there is a persistent two phase field, with a liquid phase that is large enough (greater than 7% vol, and typically between 20 and 40 vol %) so that flow can be maintained without choke off from diffusional solidification. The solid and the liquid phases remaining after any diffusional solidification have different compositions, with a bulk composition of the target. Typically the difference is slight, and the full part is substantially homogeneous. Heat treating, such as austenitizing, quenching, or slow cooling and tempering, can improve homogeneity and mechanical properties. The MPD can have a relatively high diffusivity and solubility in the skeleton. Methods of designing systems of target, skeleton and infiltrant compositions and infiltration temperature are disclosed.

Infiltrating a powder metal skeleton by a similar alloy with depressed melting point exploiting a persistent liquid phase at equilibrium, suitable for fabricating steel parts

An infiltrant is used to fill a metal powder skeleton. The infiltrant is similar in composition to the base powder, but contains a melting point depressant. The infiltrant will quickly fill the powder skeleton, then as the melting point depressant diffuses into the base powder, the liquid will undergo solidification and the material will eventually homogenize. This process allows more accurate control of dimensions in large parts with uniform or homogeneous microstructure or bulk properties.

Infiltration of a powder metal skeleton of similar materials using melting point depressant

In infiltrating a porous metal skeleton an infiltrant composition is used similar to that of the powder skeleton, but with the addition of a melting point depressant. The infiltrant quickly fills the skeleton. As the melting point depressant diffuses into the base powder, the liquid may undergo diffusional solidification and the material eventually homogenizes. Maintaining the infiltrant at a liquidus composition for the infiltration temperature typically ensures that the bulk composition or properties will remain uniform throughout the part, particularly in the direction of infiltration. Success of such an infiltration is enhanced by effective means of maintaining the molten infiltrant at a liquidus composition. It is also beneficial, in some cases, for the time scale of the infiltration to be much faster than the time scale of the diffusion of the melting point depressant and the subsequent solidification and homogenization. The relative rates of infiltration and diffusion/solidification rate are significantly impacted by the choice of materials system. Other factors also influence these rates. They include: selection of powder size (diameter), shape, surface roughness, and size distribution, feeding liquid from different locations, liquid feeder channels, smoothing of the part surface with fine powder and affecting infiltrant fluid properties. Various material systems are also disclosed, as are methods of designing a process of infiltrating a part, including binary and ternary and higher component systems. Homogeneous composition may be achieved using these techniques, particularly along the direction of infiltration.

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Arlington, MA, United States of America

Adam M Lorenz