Virage Logic Corporation

Lsi Logic Corporation

Adam Kablanian

Owen S Bair

Deepak Sabharwal

Alexander Shubat

Chuong T Le

Thomas P Anderson

Saravana Soundararajan

Richard Stephen Roy

Jaroslav Raszka

Vardan Duvalyan

Charles Li

Farzad Zarrinfar

A multiple bank memory array includes a combined memory array, an X-decoder, a first word-line driver, a second word-line driver, a reference column, a Y-multiplexer and pre-charging circuit, a sense amplifier and input/output circuit, and control and pre-coding logic. Signals are received and applied to the combined memory array and the other components via the control and pre-decode logic and the input/output circuit. The control and pre-decode logic receives control signals to control and address the combined memory array, and uses a single bit for two dimensional decoding. This architecture for multiple bank memory cell arrays a novel technique for word-line banking using tilable strap cells in a first embodiment that provides a combined array, does not require routing and eliminates redundant reference columns. The multiple bank memory array in a second embodiment also includes a novel technique for bit-line banking that eliminates sense amplifiers, provides for tilable connection between the sense amplifiers and the input output circuit, and maintains an optimum aspect ratio. In a third embodiment, the invention provides a tilable I/O interconnect structure for use on another level of banking. The banking concepts provided in the present invention are independent of the type of memory cell and applicable to all varieties of memory cells.

Multi-bank memory with word-line banking, bit-line banking and I/O multiplexing utilizing tilable interconnects

A system and method is provided for bit line sharing in a memory device. Adjacent memory cells are configured to share a bit line and are accessed with separate word lines as an odd and even plane. Bit line sharing reduces the number of Y-multiplexors and I/O circuitry required by about two-fold, and provides power savings by reducing the number of bit lines pre-charged.

System and method for bit line sharing

A compilable ROM architecture with enhanced performance characteristics, i.e., increased speed and lowered power consumption, wherein a plurality of memory locations are organized into one or more I/O blocks, each having a select number of bitlines. Each memory location is addressable by a row address and a column address. The data is stored in the ROM using a scrambled addressing scheme wherein a portion of the row and column addresses is interchanged in order to minimize bitline loading of the binary 0's.

System and method for increasing performance in a compilable read-only memory (ROM)

A compilable ROM architecture with enhanced performance characteristics, i.e., increased speed and lowered power consumption, wherein a plurality of memory locations are organized into one or more I/O blocks, each having a select number of bitlines. At least a portion of the data map in the ROM is manipulated so as to achieve a desired distribution of 0's and 1's such that the loading of 0's on the bitlines is reduced. In one exemplary embodiment, the data map is inverted per bitline, per I/O, or both. Output path circuitry is appropriately manipulated for accurate outputting of the original data. In another embodiment, the data is stored in the ROM using a scrambled addressing scheme wherein a portion of the row and column addresses is interchanged in order to minimize bitline loading of the binary 0's.

A self-timed write control memory device minimizes the memory cycle time for the cells of the array. The self-timed write control memory device preferably comprises an X-decoder, a word-line driver, a memory cell array, control logic, pre-charge circuits, sense amplifiers, a reference decoder, and a reference word-line driver. The memory device preferably further includes a first reference cell, a second reference cell or logic, a first reference column, a second reference column and a reference sense amplifier. The first reference cell is preferably used for detection of read cycle completion and the second reference cell or logic is used for detection of write cycle completion. The output of the first reference cell and second reference cell are preferably coupled to inputs of a unique reference sense amplifier. The sense amplifier includes special circuitry that uses either the output of the first reference cell or the second reference cell to generate the self-timed clock and there by minimizes the memory cycle time. The second reference cell may be any one of a conventional memory cell or write reference logic.

Fast read/write cycle memory device having a self-timed read/write control circuit

A multiple bank memory array includes a combined memory array, an X-decoder, a first word-line driver, a second word-line driver, a reference column, a Y-muitiplexer and pre-chargingz circuit, a sense amplifier and input/output circuit, and control and pre-coding logic. Signals are received and applied to the combined memory array and the other components via the control and pre-decode logic and the input/output circuit. The control and pre-decode logic receives control signals to control and address the combined memory array, and uses a single bit for two dimensional decoding. This architecture for multiple bank memory cell arrays a novel technique for word-line banking using tillable strap cells in a first embodiment that provides a combined array, does not require routing and eliminates redundant reference columns. The multiple bank memory array in a second embodiment also includes a novel technique for bit-line banking that eliminates sense amplifiers, provides for tilable connection between the sense amplifiers and the input/output circuit, and maintains an optimum aspect ratio. In a third embodiment, the invention provides a tilable I/O interconnect structure for use on another level of banking. The banking concepts provided in the present invention are independent of the type of memory cell and applicable to all varieties of memory cells.

The simultaneous read or simultaneous write memory array of the present invention includes a core array of memory units, control logic, a first port I/O, a first port shift register, first port word line generation logic, a second port I/O, a second port shift register, and a second port word line generation logic. The memory unit includes a pair of cells formed from two inverters as well as read and write transistors. The pair of memory cells preferably use the same bit lines for being read or written. Still more particularly, the novel design of the memory units combines the read and write bit lines into a single bit line such that there is a first, single bit line for reading from a first cell in the memory unit and writing to a second cell in the memory unit; and there is a second, single bit line for reading from the second cell in the memory unit and writing to the first cell in the memory unit. This is advantageous because it reduces the number of bit lines needed for each cell and thereby reduces the overall area of the core array, reduces power dissipation, and reduces noise and cross talk.

Memory array with a simultaneous read or simultaneous write ports

A multiple bank memory array includes a combined memory array, an X-decoder, a first word-line driver, a second word-line driver, a reference column, a Y-multiplexer and pre-charging circuit, a sense amplifier and input/output circuit, and control and pre-coding logic. Signals are received and applied to the combined memory array and the other components via the control and pre-decode logic and the input/output circuit. The control and pre-decode logic receives control signals to control and address the combined memory array, and uses a single bit for two dimensional decoding. This architecture for multiple bank memory cell arrays a novel technique for word-line banking using tilable strap cells in a first embodiment that provides a combined array, does not require routing and eliminates redundant reference columns. The multiple bank memory array in a second embodiment also includes a novel technique for bit-line banking that eliminates sense amplifiers, provides for tilable connection between the sense amplifiers and the input/output circuit, and maintains an optimum aspect ratio. In a third embodiment, the invention provides a tilable I/O interconnect structure for use on another level of banking. The banking concepts provided in the present invention are independent of the type of memory cell and applicable to all varieties of memory cells.

Multi-bank memory with word-line banking, bit-line banking and I/O

A multiple bank memory array includes a combined memory array, an X-decoder, a first word-line driver, a second word-line driver, a reference column, a Y-multiplexer and pre-charging circuit, a sense amplifier and input/output circuit, and control and precoding logic. Signals are received and applied to the combined memory array and the other components via the control and pre-decode logic and the input/output circuit. The control and pre-decode logic receives control signals to control and address the combined memory array, and uses a single bit for two dimensional decoding. This architecture for multiple bank memory cell arrays a novel technique for word-line banking in one embodiment that provides a combined array, does not require routing and eliminates redundant reference columns.

Multi-bank memory with word-line banking

A method provides an on-chip repair technique to fix defective row or I/O memory lines in an ASIC memory array with redundancy row or I/O memory lines. The method employs progressive urgency and dynamic repair schemes to optimize the allotted time for repairing defective row and I/O memory lines. Progressive urgency scheme increases the need to repair relative to the available redundancy row or I/O memory lines over the entire repairing time. Dynamic repair executes a mandatory-row or a mandatory-I/O repair as defective row or I/O memory lines are detected. In addition, a recurrence error reroutes the address location of a redundancy memory line to another address location of another redundancy memory line in the event that such redundancy memory line itself is defective, and thus requires further repair.

Method for repairing an ASIC memory with redundancy row and input/output

A new design methodology which utilizes a module-based architecture is used to implement customized VLSI designs. In accordance with this invention, the module-based architecture comprises a number of Matrix Transistor Logic (MTL) modules. Each MTL module has a control input buffer section, an output stage section, and a matrix array section. The matrix array section implements logic functions using Pass Transistor Logic technology. Three variables, each of which place a different constraint on the MTL modules, are used in an automated design procedure to implement the MTL modules.

Module-based logic architecture and design flow for VLSI implementation

A built-in self-repair system includes an on-chip clock generator for triggering the repairing process to repair defective memory lines or blocks in a memory array of an ASIC chip. The on-chip clock generator enables the self-repair process to start at the power up of a computer system without a need for an external test-triggering signal. The system includes a built-in self-test circuit that tests for a defective row memory line or a defective I/O memory block. The system further includes a fault-latching-and repair-execution circuit that repairs a row memory line or an I/O memory block. Repairing an IO memory block effectively repairs faults that occur between any two adjacent column shorts within an IO memory block. The preferred repairing scheme adopts a 15N diagnosis to achieve high fault correction so that a large percentage of defective memory cells can be replaced by redundant row memory lines or redundant I/O memory blocks. The defective row memory lines and I/O memory blocks are dynamically repaired as each of the row memory lines and I/O memory blocks undergoes testing to determine if any defective memory cells exist.

Built-in self repair system for embedded memories

A logic circuit and a technique for repairing faulty memory cells internally by employing on-chip testing and repairing circuits in an ASIC system. The test circuit detects column line faults, row faults, and data retention faults in a memory array. The repair circuit redirects the original address locations of the faulty memory lines to the mapped address locations of the redundant column or row lines. This repair scheme includes redundant column lines attached to each of the I/O arrays in the memory array and redundant row lines to replace detected memory faults. These testing and repairing procedures are performed within the chip without the aid of any external equipment.

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San Jose, CA, United States of America

Adam Kablanian