Lam Research Corporation

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Adam Jandl

Michal Danek

Joshua Collins

Lawrence Schloss

Sanjay Gopinath

Hanna Bamnolker

Siew Neo

Sema Ermez

Andrew C Clark

Rodney Pelzel

Andrew Johnson

Andrew Martin Joel

Aidan John Daly

Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.

Method for preventing line bending during metal fill process

Systems and methods are described herein to grow a layered structure. The layered structure comprises a first germanium substrate layer having a first lattice constant, a second layer that has a second lattice constant and is epitaxially grown over the first germanium substrate layer, wherein the second layer has a composite of a first constituent and a second constituent, and has a first ratio between the first constituent and the second constituent, and a third layer that has a third lattice constant and is epitaxially grown over the second layer, wherein the third layer has a composite of a third constituent and a fourth constituent, and has a second ratio between the third constituent and the fourth constituent, wherein the first ratio and the second ratio are selected such that the first lattice constant is between the second lattice constant and the third lattice constant.

Strain-balanced semiconductor structure

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Needham, MA, United States of America

Adam Jandl