Mainstream Engineering Corporation

Adam J Duzik

Justin J Hill

Brian P Tucker

Gregory E Chester

Jesse A Johnson, Ii

An apparatus is disclosed for a flexible, easily reconfigured vacuum chamber capable of physical property measurement at cryogenic temperatures. The chamber is easily constructed from existing cryogenic pumps. The cryostat cold finger forms a cryogenically-cooled stage, upon which a wide variety of experiment test setups can be placed for measuring many different properties at cryogenic temperatures. The lid and feedthrough ports are reconfigurable to obtain measurements and interact with samples inside the vacuum. Attached heating elements enable testing at many possible cryogenic temperatures. The specific case of laser cooling at cryogenic temperatures is presented as an example, along with necessary lid and interior components. Viewports allow a laser beam into the chamber, while mirrors redirect this into the sample. Temperature diodes and laser power meters measure any heating or cooling effects.

Cryogenic property test platform

A high-throughput method for identifying single crystal hexagonal-SiC off-axis surfaces that support surface chemistries and kinetics to selectively produce various epitaxial growth modes of the metastable 3C-SiC polytype is provided. In execution of the aforementioned method, the present invention also encompasses the use of a single crystal hexagonal-SiC domed substrate, and a method for manufacturing thereof. Said method for screening silicon carbide growth surfaces is comprised of: fabrication of a silicon carbide domed substrate; forming a step-terrace growth surface on the domed surface of said silicon carbide domed substrate by hydrogen etching; performing silicon carbide deposition upon said growth surface, thereby creating an silicon carbide epitaxial domed wafer; and characterization of said silicon carbide epitaxial domed wafer. Silicon carbide deposition upon a silicon carbide domed growth surface allows for the modulation of the supersaturation ratio under a single set of growth conditions. There is provided a method to select a specific off-cut angle and orientation for a silicon carbide substrate that can be used to selectively and homogeneously grow a targeted 3C-silicon carbide microstructure best suited for the intended application.

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Rockledge, FL, United States of America

Adam J Duzik