International Rectifier Corporation

Adam I Amali

Naresh Thapar

Daniel Marvin Kinzer

Ling Ma

Mark Pavier

Kyle A Spring

Tim Sammon

Ashita Mirchandani

Donald He

Ritu Sodhi

Siddharth Kiyawat

Russell Turner

A power semiconductor device which includes a plurality of gate trenches and a perimeter trench intersecting the gate trenches.

Power semiconductor device with interconnected gate trenches

A driver stage consisting of an N channel FET and a P channel FET are mounted in the same package as the main power FET. The power FET is mounted on a lead frame and the driver FETs are mounted variously on a separate pad of the lead frame or on the main FET or on the lead frame terminals. All electrodes are interconnected within the package by mounting on common conductive surfaces or by wire bonding. The drivers are connected to define either an inverting or non-inverting drive.

Power MOSFET with integrated drivers in a common package

A method of fabricating a power semiconductor device in which contact trenches are formed prior to forming the gate trenches.

Early contact, high cell density process

A trench power semiconductor device including a recessed termination structure.

Trench MOSFET technology for DC-DC converter applications

A trench type power MOSgated device has a plurality of spaced trenches lined with oxide and filled with conductive polysilicon. The tops of the polysilicon fillers are below the top silicon surface and are capped with a deposited oxide the top of which is flush with the top of the silicon. Source regions of short lateral extent extend into the trench walls to a depth below the top of the polysilicon. A trench termination is formed having an insulation oxide liner covered by a polysilicon layer, covered in turn by a deposited oxide.

Trench fet with self aligned source and contact

Trench FET with self aligned source and contact

A process for manufacturing a semiconductor device of the trench variety with reduced feature sizes and improved characteristics which process includes forming a termination structure having a field oxide disposed in a recess below the surface of the semiconductor die in which the active elements of the device are formed, and forming source regions after the major thermal steps have been performed.

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Hawthorne, CA, United States of America

Adam I Amali