International Business Machines Corporation

Stmicroelectronics Gmbh

Adam D Ticknor

Wei-Tsu Tseng

William Francis Landers

John H Zhang

Laertis Economikos

Gregory Gower Freeman

Ehud Aharoni

Michael F Lofaro

Oded Margalit

Robert J Baseman

Noam Slonim

James Aloysius Hagan

Karl E Boggs

Kenneth M Davis

David C Ahlgren

Raminderpal Singh

Hong Lin

Fateh A Tipu

Ramona Kei

Michal Rosen-Zvi

Kevin MacKey

Ben Kim

Timothy M McCormack

Manoj Balachandran

Deoram Persaud

Qinghuang Lin

Mahmoud M Khojasteh

William H Ma

Michael L Passow

Feng-Yi Huang

Ronald N Schulz

Ronald D Fiege

Thomas R Fisher, Jr

Thomas Edwin Sandwick

James J Steffes

James E Currie

Carol Elaine Gustafson

John Carlo Minunni, Jr

Vamsi Devarapalli

Colin J Goyette

Michael R Kennett

Feng Yi Huang

The present disclosure is directed to fluid filtering systems and methods for use during semiconductor processing. One or more embodiments are directed to fluid filtering systems and methods for filtering ions and particles from a fluid as the fluid is being provided to a semiconductor wafer processing tool, such as to a semiconductor wafer cleaning tool.

Dual medium filter for ion and particle filtering during semiconductor processing

A post metal chemical-mechanical planarization (CMP) cleaning process for advanced interconnect technology is provided. The process, which follows CMP, combines an acidic clean and a basic clean in sequence. The process can achieve a more than 60% reduction in CMP defects, such as polish residues, foreign materials, slurry abrasives, scratches, and hollow metal, relative to an all-basic clean process. The process also eliminates the circular ring defects that occur intermittently during roller brush cleans within a roller brush clean module.

Post metal chemical-mechanical planarization cleaning process

A method, a system and a computer program product suitable for use in a manufacturing environment comprising a multiplicity of nominally identical independent tools. A computing device generates a multi dimensional array of process trace data derived from at least one of the independent tools, wherein, the array includes data representing a first dimension comprising a list of steps in a manufacturing recipe and data representing a second dimension comprising a list of a set of sensors generating measurements from at least one of the independent tools. The computing device conducts an analysis on at least one preselected subset of the multi dimensional array for the purpose of evaluating at least one operating characteristic of at least one of the independent tools. The computing device presents results of the analysis via a set of hierarchically linked and browseable graphics.

Method and system for evaluating a machine tool operating characteristics

A method and system for evaluating a performance of a semiconductor manufacturing tool while manufacturing microelectronic devices are disclosed. At least one report is generated based on executions of at least one statistical test. The report includes at least one heat map having rows that correspond to sensors, columns that correspond to trace data obtained during recipe steps, and cells at the intersection of the rows and the columns. At least one sensor in the tool obtains trace data of a recipe step while manufacturing at least one microelectronic device. A computing device analyzes the obtained trace data to determine a level of operational significance found in the data and assigns a score to the trace data that indicates a level of operational significance. Then, the computing device places the score in a corresponding cell of the heat map. A user uses the cell for evaluating the tool performance.

Processes and apparatuses are disclosed for detecting and characterizing SiCOH-based dielectric materials during integrated circuit fabrication. The processes generally include chromatographically analyzing a fluid stream generated during a process employed for device fabrication, e.g., during a wet strip, a chemical mechanical planarization process and the like.

Detection and characterization of SiCOH-based dielectric materials during device fabrication

The present invention is an apparatus and method for extending the life of abrasive disks used in the conditioning of polishing pads used in chemical mechanical planarization (CMP) of polishing pads used to polish and/or planarize the surfaces of semiconductor wafers during the production of integrated circuits. The invention consists of the a disk comprising a plurality of abrasive segments, each of which is fixed in tangential and radial relationship to one another about the common axis of rotation of the conditioning disk. Means are provided for movement of the abrasive segments, individually or in sets, into or out of the plane of the active abrasive surface of the conditioning disk according to the present invention.

Extended life conditioning disk

A process for forming a bipolar transistor with a raised extrinsic base, an emitter, and a collector integrated with a CMOS circuit with a gate. An intermediate semiconductor structure is provided having CMOS and bipolar areas. An intrinsic base layer is provided in the bipolar area. A base oxide is formed across, and a sacrificial emitter stack silicon layer is deposited on, both the CMOS and bipolar areas. A photoresist is applied to protect the bipolar area and the structure is etched to remove the sacrificial layer from the CMOS area only such that the top surface of the sacrificial layer on the bipolar area is substantially flush with the top surface of the CMOS area. Finally, a polish stop layer is deposited having a substantially flat top surface across both the CMOS and bipolar areas suitable for subsequent chemical-mechanical polishing (CMP) to form the raised extrinsic base.

Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit

A chemical-mechanical polishing (CMP) pad conditioner. The conditioner has a non-uniform conditioning surface with a plurality of conditioning elements. The non-uniform surface comprises a first section having a first cutting volume per unit width and a second section having a second cutting volume per unit width that is different from the first cutting volume per unit width. The difference in cutting volume may be provided by different projected widths of the individual conditioning elements, by a difference in the linear density between the two sections, or by a difference in the cutting depth. A CMP tool comprising a polishing pad, a conditioning pad having the disclosed structure, and a mechanism for moving the polishing pad relative to the pad conditioner is also provided. A method is further provided for uniformly conditioning a CMP pad using a conditioner having the structure described.

Chemical-mechanical polishing pad conditioner

A chemical-mechanical polishing (CMP) control system controls distribution of pressure across the backside of a semiconductor wafer being polished. The system includes a CMP apparatus having a carrier for supporting a semiconductor wafer. The carrier includes a plurality of dual function piezoelectric actuators. The actuators sense pressure variations across the semiconductor wafer and are individually controllable. A control is connected to the actuators for monitoring sensed pressure variations and controlling the actuators to provide a controlled pressure distribution across the semiconductor wafer.

Piezo-actuated CMP carrier

An in-situ method for regenerating a chemical-mechanical polishing pad which includes the steps of: forming the polishing pad by dispensing liquid moldable material, such as wax, polymers or water, on a polishing surface and solidifying the liquid material by reducing the temperature, allowing the moldable material to harden; distributing slurry material on the polishing pad; polishing the surface of a semiconductor wafer with a combination of the slurry material and the polishing pad; and regenerating in-situ the polishing pad. This method quickly, easily and repeatably, resurfaces and refreshes the surface on which the a semiconductor wafer is polished. The polishing pad may also include abrasives embedded therein to enhance its polishing capabilities.

Regeneration of chemical mechanical polishing pads in-situ

A device and method for preventing settlement of particles on a chemical-mechanical polishing pad is provided. Specifically, a device capable of preventing settlement of particles on the pad is located between the polishing pad and a platen of a chemical-mechanical polishing apparatus.

Device and method for preventing settlement of particles on a

A vertically-oriented wafer polishing apparatus and method is disclosed including a vertically-oriented polishing device, a semiconductor wafer carrier and a cleaning module to clean the polishing device by removing contaminants that may scratch the wafer and also reduce the polishing rate of the apparatus. The device reduces the 'down time' of a polishing apparatus and, therefore, increases the yield of well-polished wafers in a given time period.

Vertical polishing tool and method

A wafer polishing fixture is disclosed containing a first liquid film confined by a non-porous but flexible enclosure for distributing evenly the applied polishing forces across the surface of a wafer supported by the confined liquid. The fixture comprises a flexible, non-porous template with a pocket for receiving a wafer to be polished. A washer is placed between a carrier and the template pocket. A film of water fills the bottom of the pocket and is confined with the aid of the washer and by an overlying porous pad extending across the pocket and having a non-porous sheath facing the liquid. A second liquid film saturates and covers the upper surface of the pad. The wafer to be polished floats upon the second liquid film within the pocket.

Confined water fixture for holding wafers undergoing chemical-mechanical

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Wappingers Falls, NY, United States of America

Adam D Ticknor