Intel Corporation

Intle Corporation

Adam Brand

Lawrence T Clark

A series stack including a first and a second MVSD transistor is coupled between a positive power supply and a pad. The series stack has a central node. A p-driver including a first and a second P-type transistor is coupled in series with a source of the first p-type transistor coupled to a positive power supply. The drain of the second p-type transistor is coupled to the central node.

Voltage tolerant high drive pull-up driver for an I/O buffer

A circuit device that includes a gate overlying an area of a semiconductor substrate, a well formed in the substrate proximate a first edge of the gate and doped with a first concentration of a first dopant, a channel region doped with a first concentration of a second dopant underlying a portion of the gate adjacent the well, a non-conducting region formed in the first portion of the well, and a contact to the second portion of the well distal from the first edge of the gate.

Growing community of inventors

Mountain View, CA, United States of America

Adam Brand