Aixtron Se

Aixtron, Inc.

Adam Boyd

Daniel Claessens

Wilhelm Josef Thomas Krücken

Olivier Feron

Honggen Jiang

Fred Michael Andrew Crawley

Johannes Käppeler

Jan Mulder

Hugo Silva

James O'Dowd

Eduardo Osman Piniero Sufan

Victor Saywell

Wilhelm Josef Thomas KRÜCKEN

A CVD reactor includes a gas inlet member having a circular outline, and a susceptor that can be heated by a heating device. The gas inlet member has a cooled ceiling panel with outlet openings. The CVD reactor further comprises a shield plate, which adjoins the ceiling panel and has a circular outline. The shield plate has a central zone, an annular zone surrounding the central zone, having a rear side that points toward the ceiling panel, and a flat gas outlet surface pointing toward the process chamber, in which gas outlet openings terminate. The rear side in the central zone defines a rear plane running parallel to the gas outlet surface. The shield plate has a material thickness between 3 to 12 mm, and that the shield plate is spaced apart from the ceiling plate by a gap having a height between 0.3 to 1 mm.

Method for using shield plate in a CVD reactor

Shield plate for a CVD reactor

A susceptor for a CVD-reactor includes insertion openings arranged in a bearing surface of the susceptor. An insertion section of a positioning element is inserted into one of the insertion openings. The insertion section forms positioning flanks with a section projecting from the insertion opening for fixing the position of a substrate. The insertion openings each have side walls and a base. The insertion section comprises bearing areas adjacent to the side walls of the insertion openings and a lower side of the positioning element facing the base of the insertion opening. The base of the insertion opening is separated from the lower side of the positioning element by a first distance. An edge protruding section of the positioning element is separated from a section of the bearing surface of the susceptor by a second distance.

Susceptor for a chemical vapour deposition reactor

In a CVD reactor, flushing gases of different heat conductivities are used to flush a gap between a substrate holder and a heating system. The lower side of the substrate holder is configured differently in a central region with respect to the heat transmission from the heating system to the substrate holder, than in a circumferential region that surrounds the central region. The gap has such a gap height that, upon a change of a first flushing gas with a first heat conductivity to a second flushing gas with a second heat conductivity, the heat supplied from the heating system to the substrate holder changes differently in the circumferential region than in the central region.

Methods for controlling the substrate temperature using a plurality of flushing gases

A device for holding at least one substrate in a process chamber of a CVD or PVD reactor includes a flat upper side on which at least one bearing area for the at least one substrate is located. An outline contour line corresponding to the outline contour of the substrate is flanked by positioning edges for positioning a respective section of an edge of the substrate. The device further includes carrying protrusions projecting from a bearing area base surface of the bearing area that is surrounded by the outline contour line. The carrying protrusions have contact surfaces that are raised in relation to the bearing area base surface, on which contact surfaces the substrate can be placed. In order to improve the temperature homogeneity of the surface of the substrate, each of the carrying protrusions originate from a recess of the bearing area base surface.

Substrate holding device

The invention relates to a device for coating substrates having a process chamber () disposed in a reactor housing and a two-part, substantially cup-shaped susceptor () disposed therein, forming an upper susceptor part () with the cup floor thereof having a flat plate (') and a lower susceptor part () with the cup side walls thereof, the outer side () of the plate (&#x2032;) of the upper susceptor part () facing upwards toward the process chamber () and forming a contact surface for at least one substrate, the upper susceptor part () contacting a front edge (&#x2033;) of the lower susceptor part () at the edge of said upper susceptor part (), the lower susceptor part () being supported by a susceptor carrier (), and heating zones (A, B, C) for heating the upper susceptor part () being disposed below the plate (&#x2032;). An advantageous refinement of the invention proposes that the upper susceptor part () be removable from the process chamber () separately from the lower susceptor part (), and the joint () between the edge of the upper susceptor part () and the front edge (&#x2033;) of the lower susceptor part () be formed as a heat conduction barrier.

Device for coating substrates disposed on a susceptor

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Kelmis, Belgium

Adam Boyd