Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Nanoplus Nanosystems and Technologies Gmbh

Julius-Maximillians-Universität-Würzburg

Adam Bauer

Andreas Löffler

Christian Leirer

Tobias Meyer

Michael Wittmann

David Racz

Andreas Loeffler

Wolfgang Mönch

Dominik Schulten

Sven Hoefling

Lukas Worschech

Matthias Peter

Jürgen Off

Lorenzo Zini

Michael Binder

Disclosed is a conversion element () comprising an active region () that is formed by a semiconductor material and includes a plurality of barriers () and quantum troughs (), a plurality of first structural elements () on a top face (la) of the conversion element (), and a plurality of second structural elements () and/or third structural elements () which are arranged on a face of the active region () facing away from the plurality of first structural elements (). Also disclosed is a method for producing a conversion element of said type.

Conversion element and radiation-emitting semiconductor device comprising a conversion element of said type

A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.

Semiconductor component and illumination device

A method for producing an optoelectronic semiconductor chip is disclosed. A substrate is provided and a first layer is grown. An etching process is carrying out to initiate V-defects. A second layer is grown and a quantum film structure is grown. An optoelectronic semiconductor chip is also disclosed. The method can be used to produce the optoelectronic semiconductor chip.

Optoelectronic semiconductor chip and method for the production thereof

The invention describes a radiation-emitting semiconductor component () having a first semiconductor layer sequence () which is designed to generate radiation of a first wavelength, a second semiconductor layer sequence (), a first electrode area () and a second electrode area (). It is provided that the second semiconductor layer sequence () has a quantum pot structure () with a quantum layer structure () and a barrier layer structure () and is designed to generate incoherent radiation of a second wavelength by means of absorption of the radiation of the first wavelength, and an electric field can be generated in the second semiconductor layer sequence () by the first electrode area () and the second electrode area ().

Radiation-emitting semiconductor device

An optoelectronic semiconductor chip has a non-rectangular, parallelogram-shaped top surface and an active zone, which is at a distance from the top surface and runs parallel to the top surface at least in places. The top surface includes a radiation exit surface, through which electromagnetic radiation generated during operation in the active zone emerges. The radiation exit surface has at least four vertices. The top surface includes at least one triangular connection area via which the active zone is electrically connectable.

Optoelectronic semiconductor chip and optoelectronic semiconductor component

An optoelectronic component includes a semiconductor layer structure having a quantum film structure, and a p-doped layer arranged above the quantum film structure, wherein the p-doped layer includes at least one first partial layer and a second partial layer, and the second partial layer has a higher degree of doping than the first partial layer.

Optoelectronic gan-based component having increased ESD resistance via a superlattice and method for the production thereof

An optoelectronic device includes a carrier on which a semiconductor layer sequence is applied, said semiconductor layer sequence including an n-doped semiconductor layer and a p-doped semiconductor layer such that a p-n junction is formed which includes an active zone that generates electromagnetic radiation, wherein at least one of the n-doped semiconductor layer and the p-doped semiconductor layer includes a doped region having a first doping concentration greater than a second doping concentration in a surrounding area of the region in the semiconductor layer including the region.

Optoelectronic component and method of producing an optoelectronic component

An interband cascade laser amplifier medium (M) having a number of cascades (C) strung together along a transport direction (T) of charge carriers and each having an electron injector region (I), an amplifier region (V) and an electron collector region (K), wherein the amplifier region (V) has a hole quantum film () having a first semiconductor material and an electron quantum film () having a second semiconductor material, and wherein the electron collector region (K) has at least one collector quantum film () having a third semiconductor material and separated by a first barrier layer (), and the electron injector region (I) has at least one injector quantum film () having a fourth semiconductor material and separated by a second barrier layer ().

Interband cascade laser amplifier medium

An interband cascade laser amplifier medium having an amplifier region (V) comprising a hole quantum film () comprising a first semiconductor material and an electron quantum film () comprising a second semiconductor material, an electron collector region (K) comprising at least one collector quantum film () comprising a third semiconductor material and separated by a first barrier layer (), and an electron injector region (I) following the latter and comprising at least one injector quantum film () comprising a fourth semiconductor material and separated by a second barrier layer (). The first semiconductor material of the hole quantum film () is a III-V compound semiconductor comprising at least four elements, at least two of the elements selected from Ga, In and Al, and at least two of the elements selected from As, Sb, P and N. The amplifier medium exhibits an efficient laser emission at wavelengths above 2.5 &#x3bc;m.

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Donaustauf, Germany

Adam Bauer