The University of Toledo

University of Virginia Patent Foundation

Adam B Phillips

Michael J Heben

Alvin D Compaan

Victor V Plotnikov

Rajendra R Khanal

Bellave S Shivaram

Kamala Khanal Subedi

Randall J Ellingson

Fadhil K Alfadhili

Dipendra Pokhrel

Ebin Bastola

Methods for forming electrical contacts with CdTe layers, methods for forming photovoltaic devices, methods for passivating a CdTe surface, and photovoltaic devices are described.

PERC-like contact to CdTe solar cells

A photovoltaic cell structure is disclosed that includes a back contact layer that includes single wall carbon nanotube elements. The single wall carbon nanotube (SWNT) back contact is in electrical communication with an adjacent semiconductor layer and provides a buffer characteristic that impedes elemental metal migration from the back contact into the semiconductor active layers. In one embodiment, the SWNT back contact includes a semiconductor characteristic and a buffer characteristic. In another embodiment, the SWNT back contact further includes a metallic characteristic.

Back contact layer for photovoltaic cells

Provided herein are materials that can achieve up to 14% hydrogen absorption by weight in ambient conditions, which is a marked improvement over the hydrogen absorption values found in the prior art. Further provided are experimental conditions necessary to produce these materials. In order to produce the hydrogen storage material, a transition metal (or Lithium) is vaporized in a pi bond gas in conditions that permit only a few bonding collisions to occur between the vaporized transition metal atoms and pi bond gas molecules before the resulting bonded material is collected.

Hydrogen storage material with intermediate bond strength and process for making the same

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Toledo, OH, United States of America

Adam B Phillips