Xerox Corporation

Ackerman C John

Gary Alan Kneezel

Almon P Fisher

Brian T Ormond

Daniel E Kuhman

Lawrence H Herko

Allan F Camp

A method of forming a semiconductor structure from a first wafer and a second wafer. A pit or groove is formed in a lower surface of the first wafer. The lower surface of the first wafer is bonded to an upper surface of the second wafer. A groove is then formed on an upper surface of the first wafer, such that an opening is formed in the first wafer that exposes at least one alignment reference target on the upper surface of the second wafer. The bonded first wafer and second wafer is then diced using the exposed at least one alignment reference target to form a semiconductor structure.

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Rochester, NY, United States of America

Ackerman C John