Robert Boschgmbh

Achim Trautmann

Ando Feyh

Reinhard Neul

Daniel Christoph Meisel

Ning Qu

Axel Franke

Ralf Reichenbach

Alexander Buhmann

Friedjof Heuck

Joachim Rudhard

Sonja Knies

Maik Wiemer

Christian Tobias Banzhaf

Michael Grieb

Christian Rettig

Joerg Froemel

Thorsten Mueller

Frederik Schrey

Manuel Engesser

Knut Gottfried

A method for producing a substrate for a metal-oxide-semiconductor field-effect transistor or a micro-electromechanical system includes dry etching a preliminary trench into the substrate by using a structured first masking layer. The substrate includes a silicon carbide layer, and the dry etching is carried out in such a way that a remnant of the first structured masking layer remains. The method further includes applying a second masking layer at least to walls of the preliminary trench and dry etching by using the remnant of the first masking layer and the second masking layer so as to produce a trench with a step in the trench.

Method for producing a substrate, substrate, metal-oxide-semiconductor field-effect transistor with a substrate, micro-electromechanical system with a substrate, and motor vehicle

A substrate for a metal oxide semiconductor field effect transistor, and a metal oxide semiconductor field effect transistor, are made available. The substrate encompasses: an n-doped epitaxial drift zone, a p-doped epitaxial first layer disposed on the drift zone, a heavily n-doped second layer disposed on the first layer, and a terminal formed by pimplantation, the first layer being in electrical contact with the terminal and being disposed laterally between the terminal and a trench, the trench being formed in the drift zone, in the first layer, and in the second layer. The substrate is characterized in that an implantation depth (P) of the pimplantation is at least as great as a depth of the trench. The deep pimplantation can separate adjacent trenches in such a way that a field can no longer attack a gate oxide because it is directed around the gate oxide.

MOS field-effect transistor and method for the production thereof

A particle sensor for detecting electrically conductive particles. The particle sensor includes a first electrode structure with at least one electrode and a second electrode structure with at least one electrode. The first electrode structure and the second electrode structure are situated on an electrically insulating base body. An electric potential difference is generatable between an electrode of the first electrode structure and an electrode of the second electrode structure. The base body includes a heating structure for heating the first electrode structure and the second electrode structure, the heating structure being at least partially enclosed by the base body. This makes it possible to protect the heating structure and also to reduce the voltage needed to burn off particles accumulated on the electrode structures. A method for manufacturing a particle sensor is also described.

Particle sensor and method for manufacturing a particle sensor

A substrate includes a trench with walls and a base. The substrate also includes a dielectric field plate. The dielectric field plate consists of at least one first dielectric layer, which only adjoins lower sections of the walls of the trench and the base of the trench. Parasitic capacitances can be reduced when using this substrate for power transistors.

Method for producing a dielectric field plate in a substrate trench, a corresponding substrate, and a power transistor

A semiconductor device having a substrate, and at least one contact, situated on and/or above a surface of the substrate, having at least one layer made of a conductive material, the conductive material including at least one metal. The layer made of the conductive material is sputtered on, and has tear-off marks on at least one outer side area between an outer base area facing the surface and an outer contact area facing away from the surface. A manufacturing method for a semiconductor device having at least one contact is also described.

Semiconductor device having at least one contact, and manufacturing method for a semiconductor device having at least one contact

An arrangement having a first and a second substrate is disclosed, wherein the two substrates are connected to one another by means of an SLID (Solid Liquid InterDiffusion) bond. The SLID bond exhibits a first metallic material and a second metallic material, wherein the SLID bond comprises the intermetallic Al/Sn-phase.

Arrangement of two substrates having an SLID bond and method for producing such an arrangement

A piezoresistive micromechanical sensor component includes a substrate, a seismic mass, at least one piezoresistive bar, and a measuring device. The seismic mass is suspended from the substrate such that it can be deflected. The at least one piezoresistive bar is provided between the substrate and the seismic mass and is subject to a change in resistance when the seismic mass is deflected. The at least one piezoresistive bar has a lateral and/or upper and/or lower conductor track which at least partially covers the piezoresistive bar and extends into the region of the substrate. The measuring device is electrically connected to the substrate and to the conductor track and is configured to measure the change in resistance over a circuit path which runs from the substrate through the piezoresistive bar and from the piezoresistive bar through the lateral and/or upper and/or lower conductor track.

Piezoresistive micromechanical sensor component and corresponding measuring method

A micromechanical assembly for bonding semiconductor substrates includes a semiconductor substrate having a chip pattern having a plurality of semiconductor chips, each having a functional region and an edge region surrounding the functional region. There is a bonding frame made of a bonding alloy made from at least two alloy components in the edge region, spaced apart from the functional region. Within the part of the edge region surrounding the bonding frame between the bonding frame and the functional region, there is at least one stop frame made of at least one of the alloy components, which is configured such that when a melt of the bond alloy contacts the stop frame during bonding, the bonding alloy solidifies.

Micromechanical method and corresponding assembly for bonding semiconductor substrates and correspondingly bonded semiconductor chip

A component including a via for electrical connection between a first and a second plane of a substrate is provided. The substrate has a borehole having an inner wall that is coated with a conductive layer made of an electrically conductive material, an intermediate layer being disposed between the inner wall and the conductive layer. The intermediate layer includes electrically insulating SiC.

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Leonberg, Germany

Achim Trautmann