USA As Represented by Secretary of the Navy

Abu N Choudhury

Clifton G Fonstad

Kamal Tabatabaie-Alavi

Nancy J Gabriel

Nancy J Slater Gabriel

A method for Ion implantation using multiple energy Be.sup.+ to produce p-type regions in n-In.sub.0.53 Ga.sub.0.47 As. A simple technique is used to develop capless annealing of InGaAs up to 700.degree. C. The ion implantation of silicon is then accomplished to create n.sup.+ layers in previously Be-implanted InGaAs epilayers. The active efficiency of 40% for 50 KeV Be implant has been found and efficiencies of 86% and 38% are found for the low and high energy Si implants respectively.

Dual species ion implantation of ternary compounds based on In-Ga-As

A method for obtaining a very low resistance ohmic contact on p-type Indium hosphide (InP) by light-assisted plating of Au and Zn. The plating technique, which uses alternating positive and negative current pulses, has been used for producing patterned, small area contacts on device structures and is compatible with established n-type ohmic contacting procedures.

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Belmont, MA, United States of America

Abu N Choudhury