Tokyo Electron Limited

USA As Represented by Secretary of the Navy

Raytheon Company

Abron S Toure

Steven R Collins

Masahiro Yamada

Steven D Bernstein

Kunihiko Hinata

Kouichiro Inazawa

Youbun Ito

Hiromi Sakima

Stephen N Golovato

Martin Kent

Bruce W LeBlanc

A structure including a TiW oxygen plasma mask, a photoresist mask above and in contact with the TiW oxygen plasma mask, a 2000 angstrom thick oxygen plasma vaporizable RuOelectrode layer partially under and in contact with the TiW oxygen plasma mask, the RuOelectrode layer not being completely covered by a pattern of the TiW oxygen plasma mask, a first side of a PZT ferroelectric layer in contact with the RuOelectrode layer and a second RuOelectrode layer in contact with a second side of the PZT ferroelectric layer.

[object Object]

A method for forming an RuOx electrode comprising depositing a TiW layer on an RuOx layer, forming a photo-resist mask on the TiW layer, in order to mask the TiW layer into a masked TiW layer, etching the masked TiW layer with a CF4 plasma, a TiW mask being formed on the RuOx layer, the CF4 plasma is not etching the RuOx and vaporizing unmasked RuOx portion of the RuOx layer with an oxygen plasma, the masked RuOx layer being formed into an RuOx electrode.

Method for forming an RuOx electrode and structure

An electrical coupling is provided between chamber parts of electronic device processing equipment (e.g., equipment used for processing semiconductor wafers) to reduce differences in the electrical potential between such parts. The coupling prevents or at least reduces the presence of plasma or excited gases in undesired regions of the process chamber. In illustrated embodiments, the coupling extends from a cover of a vertically movable electrode assembly to the liner of the chamber wall. Although these parts are each respectively coupled to ground, it is believed that differences in the ground path impedances result in these parts having different electrical potentials, and the potential differences can cause plasma or excited gases to be present in undesirable regions of the chamber. These electrical potential differences are suppressed by electrically coupling the parts to thereby prevent or reduce the presence of plasma or excited gases in undesired regions of the chamber. Although in the illustrated embodiments the cover of the electrode assembly is coupled to the chamber liner, the coupling could be utilized to suppress potential differences between other chamber parts.

Electrical coupling between chamber parts in electronic device processing equipment

A method and system for processing a substrate in the presence of high purity C F . When processing oxides and dielectrics in a gas plasma processing system, C F is used in combination with a carrier gas (e.g., Ar) and one or more of CO and O . When using a silicon nitride (Si N ) layer as an etch stop, effective etching is performed due to the selectivity of oxides versus silicon nitride. The method is used when etching down to self-aligning contacts and other layers. The method may be practiced with or without using an anti-reflective coating underneath the photoresist layer.

Etchant for use in a semiconductor processing method and system

A method and system for processing a substrate in the presence of high purity C.sub.5 F.sub.8. When processing oxides and dielectrics in a gas plasma processing system, C.sub.5 F.sub.8 is used in combination with a carrier gas (e.g., Ar) and one or more of CO and O.sub.2. When using a silicon nitride (Si.sub.x N.sub.y) layer as an etch stop, effective etching is performed due to the selectivity of oxides versus silicon nitride. The method is used when etching down to self-aligning contacts and other layers. The method may be practiced with or without using an anti-reflective coating underneath the photoresist layer.

Semiconductor processing method and system using C.sub.5 F.sub.8

A method of patterning a film of PZT material comprises the steps of providing a mask over a selected surface portion of the PZT material; and, plasma etching unmasked portions of the thin film material. The method includes the steps of: introducing a gas mixture of halogenated gases into a chamber; ionizing the gas mixture into a plasma in the chamber by imposition of an electric field across the introduced gaseous mixture, chemically reacting the ionized gaseous mixture, chemically reacting the unmasked portions of the lead zirconate titanate thin film material to selectively remove such exposed portion of the thin film material. The gas mixture is a mixture of a chloride and a compound of fluorine. Preferably the compound of fluorine is a halocarbon or fluorocarbon. In particular, the fluorocarbon is a trifluoromethane, CHF.sub.3, and the chloride is boron trichloride BCl.sub.3.

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Portland, OR, United States of America

Abron S Toure