Yeda Research and Develpment & Co. Ltd

International Business Machines Corporation

Uniphase Laser Enterprise Ag

Abram Jakubowicz

Peter Roentgen

David Ferdinand Cahen

Christoph S Harder

Konstantin Gartsman

Marcel Gasser

Wilhelm Heuberger

Ernst-Eberhard Latta

Albertus Oosenbrug

Eberhard Latta

Hans Peter Dietrich

Urs Deutsch

William Patrick

Andreas Daetwyler

Erica Williams

Geula Dagan

Leonid Chernyak

As will be described in more detail hereinafter, there is disclosed herein a titanium nitride diffusion barrier layer and associated method for use in non-silicon semiconductor technologies. In one aspect of the invention, a semiconductor device includes a non-silicon active surface. The improvement comprises an ohmic contact serving to form an external electrical connection to the non-silicon active surface in which the ohmic contact includes at least one layer consisting essentially of titanium nitride. In another aspect of the invention, a semiconductor ridge waveguide laser is disclosed which includes a semiconductor substrate and an active layer disposed on the substrate. A cladding layer is supported partially on the substrate and partially on the active layer. The cladding layer includes a ridge portion disposed in a confronting relationship with the active region. A metallization structure substantially covers the ridge portion and includes at least one layer consisting essentially of titanium nitride.

Titanium nitride diffusion barrier for use in non-silicon technologies and method

A semiconductor laser diode, and a method for producing the semiconductor laser diode, includes a waveguide being terminated by a back facet and a front facet and a front facet coating and a back facet coating having a reflectivity providing for controlled decoupling of light at the front facet from the standing lightwave in the waveguide. The front facet coating includes a stack of layers providing for a phase shift of the standing lightwave within the waveguide such that the intensity of the lightwave at the front facet, where the light is decoupled from the standing lightwave, has a relative minimum.

Semiconductor lasers and method for making the same

The invention related to a process for the production of a monolithic electronic and/or optoelectronic single-element or multi-element structure from a semionic material selected from the group of semionic materials comprising doped elemental semiconductors and doped binary, ternary or multinary chalcogenide or pnictide semiconductors, said process comprising: (a) establishing a location in a semionic body; (b) applying an electric field to said location in said semionic body; (c) maintaining said semionic body including said location at a temperature sufficiently low to preclude melting or decomposition of the semionic body while said electric field is being applied; and (d) controlling the electric field as to magnitude and time so that no decomposition and macroscopic melting of the material occurs while creating doping profiles sufficiently sharp to define at least one homojunction and thus create an electronic or optoelectronic device element in the semionic material in said location thereof. The invention further relates to the monolithic electronic and/or optoelectric structures produced by said process.

Monolithic optoelectronic and electronic structures

The invention relates to a monolithic two- or three-dimensional multi-element electronic structure made of a ternary or multinary chalogenide and pnictide semiconductor. The invention further relates to a method for the production of monolithic electronic single- or multi-element structures from semionic materials, which comprises applying at about ambient temperatures or below, a predetermined electric field, localized to specific locations of said structure, if desired with an additional excitation field thus creating the desired electronic device elements throughout the semionic material at predetermined locations thereof.

Monolithic electronic structures

Growing community of inventors

Rueschlikon, Switzerland

Abram Jakubowicz