Samsung Electronics Co., Ltd.

Abraham Yoo

Tae Gon Kim

Heon-jong Shin

Hee-Sung Kang

Seung Hyun Song

Bong Soo Kim

Yuichiro Sasaki

Kyung In Choi

Alexander Schmidt

Yoshiya Moriyama

Heung Soon Lee

A semiconductor device having an impurity region is provided. The semiconductor device includes a fin active region having protruding regions and a recessed region between the protruding regions. Gate structures overlapping the protruding regions are disposed. An epitaxial layer is disposed in the recessed region to have a height greater than a width. An impurity region is disposed in the fin active region, surrounds side walls and a bottom of the recessed region, has the same conductivity type as a conductivity type of the epitaxial layer, and includes a majority impurity that is different from a majority impurity included in at least a portion of the epitaxial layer.

Method of forming a semiconductor device having impurity region

Semiconductor device having impurity region

A shared contact structure, semiconductor device and method of fabricating the semiconductor device, in which the shared contact structure may include a gate electrode disposed on an active region of a substrate and including facing first and second sidewalls. The first sidewall may be covered with an insulating spacer. The source/drain regions may be formed within the active region adjacent the first sidewall, and provided on the opposite side of the second sidewall. A corner protection pattern may be formed adjacent the source/drain regions and the insulating spacer, and covered by an inter-layer dielectric. A shared contact plug may be formed through the inter-layer dielectric, to be in contact with the gate electrode, corner protection pattern and source/drain regions.

Shared contact structure, semiconductor device and method of fabricating the semiconductor device

Growing community of inventors

Hwaseong-si, South Korea

Abraham Yoo