Applied Materials, Inc.

Abraham Ravid

Todd J Egan

Boguslaw A Swedek

Dominic J Benvegnu

Jeffrey Drue David

Harry Q Lee

Jun Qian

Lakshmanan Karuppiah

Ingemar Carlsson

Joseph Yudovsky

Kevin Griffin

Dmitry A Dzilno

Alex Minkovich

Karen Lingel

Mehdi Vaez-Iravani

Samer Banna

Robert D Tolles

Gregory Kirk

Kaushal Gangakhedkar

Edward W Budiarto

Yaoming Shen

Sidney P Huey

Kyle Tantiwong

Robert O Miller

Michael Robert Rice

Feng Quan Liu

Ganesh Balasubramanian

Daniel J Woodruff

Sen-Hou Ko

Kun Xu

Wen-Chiang Tu

Yuchun Wang

Izya Kremerman

Robert W Batz, Jr

Paul Dennis Connors

Sergey Starik

Paul V Miller

Somesh Khandelwal

Bridger Earl Hoerner

Eran Weiss

Mitchell DiSanto

Hari Kishore Ambal

A metrology technique for analyzing a substrate includes storing data indicating a boundary of an area in a 2-dimensional color space having a pair of color channels including a first color channel and a second color channel as axes of the color space, receiving color data of a substrate from a camera, generating a color image of the substrate from the color data, performing a comparison of a pair of color values for the pair of color channels for the pixel to the boundary of the area in the 2-dimensional color space for each pixel of a plurality of pixels of the color image to determine whether the pair of color values meet thresholds provided by the boundary, and generating a signal to an operator based on results of the comparison for the plurality of pixels.

Color imaging for CMP monitoring

Apparatus and methods of measuring and controlling the gap between a susceptor assembly and a gas distribution assembly are described. Apparatus and methods for positional control and temperature control for wafer transfer purposes are also described.

Position and temperature monitoring of ALD platen susceptor

A system for processing a substrate is provided. The system includes a process chamber including one or more sidewalls enclosing a processing region; and a substrate support. The system further includes a passageway connected to the process chamber; and a first particle detector disposed at a first location along the passageway. The first particle detector includes an energy source configured to emit a first beam; one or more optical devices configured to direct the first beam along one or more paths, where the one or more paths extend through at least a portion of the passageway. The first particle detector further includes a first energy detector disposed at a location other than on the one or more paths. The system further includes a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first particle detector.

Particle detection for substrate processing

A polishing system includes a polishing station including a platen to support a polishing pad, a support to hold a substrate, an in-line metrology station to measure the substrate before or after polishing of a surface of the substrate in the polishing station, and a controller. The in-line metrology station includes a color line-scan camera, a white light source, a frame supporting the light source and the camera, and a motor to cause relative motion between the camera and the support along a second axis perpendicular to the first axis to cause the light source and the camera to scan across the substrate. The controller is configured to receive a color data from the camera, to generate a 2-dimensional color image from the color data, and to control polishing at the polishing station based on the color image.

An electroplating reactor includes an electro-plating solution in a bath, a ring cathode in the bath and located to contact a workpiece such that only the front side of the workpiece is immersed in the solution, plural anodes immersed in the bath below the ring cathode, and plural anode voltage sources coupled to the plural anodes; plural thickness sensors at spatially separate locations on the back side of the workpiece with feedback control to the anode voltage sources.

Electroplating tool with feedback of metal thickness distribution and correction

Apparatus and methods of dimension control and monitoring between a processes fixture and a susceptor, and position determination of wafers are described.

Wafer placement and gap control optimization through in situ feedback

A method and apparatus to determine a parameter of a metal-containing film are provided herein. In some embodiments, a method of determining a parameter of a metal-containing film may include generating a first magnetic field by flowing an alternating current through a coil disposed adjacent to and spaced apart from the metal-containing film, wherein the first magnetic field induces a second magnetic field proximate the metal-containing film; heating the metal-containing film from a first temperature to a second temperature; measuring a response of the first magnetic field to the second magnetic field as the metal-containing film is heated from the first temperature to the second temperature; and correlating the response with a rate of temperature change of the metal-containing film as the metal-containing film is heated from the first temperature to the second temperature to determine a parameter of the metal-containing film.

Methods and apparatus to determine parameters in metal-containing films

A measurement tool for measuring an electrical parameter of a metal film deposited on a front side of a workpiece includes an electrical sensor connected to a workpiece contact point, an energy beam source with a beam impact location on the front side, a holder and a translation mechanism capable of translating the holder relative to the workpiece support, the beam source supported on the holder, and a computer programmed to sense a behavior of an electrical parameter sensed by the sensor.

Non-contact sheet resistance measurement of barrier and/or seed layers prior to electroplating

Methods and systems for alignment of substrate-scale masks are described. The alignment methods presented may improve the uniformity and repeatability of processes which are impacted by the relative lateral position of a substrate-scale mask and a substrate. The methods involve measuring the 'overhang' of the substrate at multiple locations around the periphery of the substrate-scale mask. Based on the measurements, the relative position of the substrate relative to the substrate-scale mask is modified by adjustment of the substrate and/or mask position. The adjustment of the relative position is made in one adjustment in embodiments. A feature of hardware and methods involves the capability of making measurements and adjustments while a substrate processing system is fully assembled and possibly under vacuum.

Method of aligning substrate-scale mask with substrate

An optical calibration method and apparatus for calibration of wafer positioning within a reactor chamber under process conditions employs an array of cameras in a lid of the chamber using images of the wafer edge to locate the wafer relative to the reference feature.

Apparatus and method for optical calibration of wafer placement by a robot

A metrology system has an elongate stationary camera pixel array facing a workpiece transit path of a robot with an field of view corresponding to a workpiece diameter and extending transverse to the transit path portion, and a stationary elongate light emitting array generally parallel to the pixel array. An image control processor causes the camera to capture successive image frames while the robot is moving the workpiece through the transit path.

Metrology system for imaging workpiece surfaces at high robot transfer speeds

Methods of determining thickness and phase of a GST layer on a semiconductor substrate are described using intensity spectra within the infra-red range. In particular, techniques for using certain transmission at certain frequencies are disclosed for faster thickness and phase determination in an in-line or standalone metrology/monitoring system for CMP processes.

Metrology for GST film thickness and phase

A method is provided for imaging a workpiece by capturing successive frames of an elongate stationary field of view transverse to a workpiece transit path of a robot, while the workpiece is transported by the robot. The robot transit path is illuminated with an elongate illumination pattern transverse to the transit path to obtain a workpiece image of successive frames. Motion-induced image distortion is prevented or reduced adjusting the camera frame rate in real time in proportion to changes in robot velocity profile of the workpiece along the transit path.

Method for imaging workpiece surfaces at high robot transfer speeds with reduction or prevention of motion-induced distortion

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Cupertino, CA, United States of America

Abraham Ravid