Stmicroelectronics International N.v.

Stmicroelectronics S.r.l.

Abhishek Mittal

Vikas Rana

Marco Pasotti

Dario Livornesi

Roberto Bregoli

An integrated circuit includes a memory array and a read voltage regulator that generates read voltages from the memory array. The read voltage regulator includes a replica memory cell and the replica bitline current path. The replica memory cell is a replica of memory cells of the memory array. The replica bitline current path is a replica of current paths associated with deadlines of the memory array. The read voltage regulator generates a read voltage based on the current passed through the replica bitline current path. This read voltage is then supplied to the wordlines of the memory array during a read operation.

Circuit and method for process and temperature compensated read voltage for non-volatile memory

A charge pump includes boosting circuits cascade coupled between first and second nodes, wherein each boosting circuit is operable in both a positive voltage boosting mode to positively boost voltage and a negative voltage boosting mode to negatively boost voltage. A first switching circuit selectively applies a first voltage to one of the cascaded boosting circuits in response to a first logic state of a periodic enable signal, with the cascaded boosting circuits operating in the positive voltage boosting mode to produce a high positive voltage at the second node. A second switching circuit selectively applies a second voltage to another of the cascaded boosting circuits in response to a second logic state of the periodic enable signal, with the cascaded boosting circuits operating in the negative voltage boosting mode to produce a high negative voltage at the first node. Simultaneous output of the positive and negative voltages is made.

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Ghaziabad, India

Abhishek Mittal