Applied Materials, Inc.

Abhishek Chowdhury

Nataraj Bhaskar Rao

Edwin C Suarez

Harisha Sathyanarayana

Siqing Lu

Arun Chakravarthy Chakravarthy

Philip Allan Kraus

John C Forster

Anantha K Subramani

Kallol Bera

Mohammad Kamruzzaman Chowdhury

Farzad Houshmand

Ravikumar Patil

Diego Ramiro Puente Sotomayor

Qanit Takmeel

Jon Christian Farr

Mihaela A Balseanu

Mandyam Sriram

Kevin Griffin

Yi Zheng

Kaushal Gangakhedkar

Mario Dave Silvetti

Kenneth Brian Doering

Eller Y Juco

Keiichi Tanaka

Vijayabhaskara Venkatagiriyappa

Sriharish Srinivasan

Srinivas Ramakrishna

Francis Kanyiri Mungai

Saravanan Chandrabalu

Prabhuraj Kuberan

Santhoshkumar Doddegowdanapalya Nanjundegowda

Somashekhar Kosthi

Abhijit Ghosh

Jyoti Prakash Deo

Nattaworn Nuntaworanuch

Methods and apparatus for processing a substrate are provided herein. For example, an apparatus for processing a substrate comprises a top delivery gas nozzle configured to direct process gas toward a substrate support surface of a substrate support and a side delivery gas nozzle configured to direct the process gas toward a side surface of the substrate support, a first gas line connected to the top delivery gas nozzle, a second gas line connected to the side delivery gas nozzle, and a plurality of valves connected to the first gas line and the second gas line for providing process gas to the processing volume of the processing chamber, and a first orifice flow restrictor or a first needle valve connected to the first gas line or a second orifice flow restrictor or a second needle valve connected to the second gas line.

Methods and apparatus for processing a substrate

Deposition ring of a process kit for semiconductor substrate processing

Grounding ring of a process kit for semiconductor substrate processing

Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

Symmetric plasma source to generate pie-shaped treatment

Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes: a deposition ring including a first portion having an first inner ledge and a second portion having a second inner ledge, wherein in a first position, the first portion is spaced from the second portion, and wherein in a second position, the second portion is configured to engage the first portion so that the first inner ledge is aligned with the second inner ledge along a common plane to form a clamping surface.

Deposition ring for thin substrate handling via edge clamping

Cover ring for use in semiconductor processing chamber

Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a cover ring for use in a process chamber includes: an annular body that includes an upper surface and a lower surface, an inner lip extending radially inward and downward from the annular body, and a plurality of protrusions extending downward from the inner lip and disposed at regular intervals along the inner lip, wherein lowermost surfaces of the plurality of protrusions together define a planar substrate contact surface.

Thin substrate handling via edge clamping

Embodiments of fast gas exchange (FGE) manifolds are provided herein. In some embodiments, a FGE manifold includes: a manifold housing having a plurality of inlets and a plurality of outlets for flowing a plurality of process gases therethrough, wherein the plurality of outlets correspond with a plurality of zones in the process chamber; a plurality of hybrid valves disposed in the manifold housing and fluidly coupled to the plurality of inlets; a plurality of mass flow controllers disposed in the manifold housing downstream of the plurality of hybrid valves; a plurality of mixing lines extending downstream from the plurality of mass flow controllers to a plurality of outlet lines; and a plurality of outlet valves disposed in line with corresponding ones of the plurality of outlet lines, wherein a flow path is defined between each inlet of the plurality of inlets and each outlet of the plurality of outlets.

Mass flow controller based fast gas exchange

Embodiments of a lift apparatus for use in a substrate processing chamber are provided herein. In some embodiments, a lift apparatus includes: a plurality of first lift pin assemblies configured to raise or lower a substrate having a given diameter when disposed thereon, wherein each of the first lift pin assemblies includes a first lift pin disposed on a first bellows assembly; a plurality of second lift pin assemblies arranged in a circle having a diameter greater than the given diameter and configured to raise or lower an annular chamber component, wherein each of the second lift pin assemblies includes a second lift pin disposed on a second bellows assembly; an actuator; and a lift assembly coupled to the actuator and configured to raise or lower each of the first lift pin assemblies and the second lift pin assemblies by movement of the actuator.

Common substrate and shadow ring lift apparatus

Apparatus and methods for lifting loads are described. The load lift includes a support frame and a lift assembly with main cylinder and at least one standby cylinder connecting a rotatable cross beam with a clamp plate. A rotary actuator assembly is connected to the lift beam to move the lift assembly out of the way while not in use by rotating the lift assembly from a lift position to a standby position.

Fail-safe pneumatic lift system

Apparatus and methods for vacuum chucking a substrate to a susceptor. The susceptor comprises one or more angularly spaced pockets are positioned around a center axis of the susceptor, the one or more angularly spaced pockets having an inner pocket and an outer pocket. The susceptor can be configured as an intermediate chuck having one or more pucks positioned within the inner pocket or as a distributed chuck having one or more pucks positioned within the outer pocket. The one or more pucks has a center hole, at least one radial channel and at least one circular channel having chuck holes for vacuum chucking a substrate.

Susceptor wafer chucks for bowed wafers

Symmetric plasma source to generate pie shaped treatment

Plasma source assemblies comprising a housing with an RF hot electrode and a return electrode are described. The housing includes a gas inlet and a front face defining a flow path. The RF hot electrode includes a first surface oriented substantially parallel to the flow path. The return electrode includes a first surface oriented substantially parallel to the flow path and spaced from the first surface of the RF hot electrode to form a gap. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

Lateral plasma/radical source

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Bengaluru, India

Abhishek Chowdhury