Qualcomm Incorporated

Abhishek Banerjee

Wenqing Wu

Kendrick H Yuen

Seung Hyuk Kang

Xia Li

Jung Pill Kim

William Xia

Raghu Sagar Madala

Chengzhi Pan

A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.

STT-MRAM design enhanced by switching current induced magnetic field

Sensor circuitry including probabilistic switching devices, such as spin-transfer torque magnetic tunnel junctions (STT-MTJs), is configured to perform ultra-low power analog to digital conversion and compressive sensing. The analog to digital conversion and compressive sensing processes are performed simultaneously and in a manner that is native to the devices due to their probabilistic switching characteristics.

Spin torque transfer magnetic tunnel junction intelligent sensing

Growing community of inventors

Kanpur, India

Abhishek Banerjee