Applied Materials, Inc.

Abhilash J Mayur

Dean C Jennings

Mark Yam

Vijay Parihar

Aaron Muir Hunter

Bruce E Adams

Joseph Michael Ranish

Haifan Liang

Timothy N Thomas

Kai Ma

Blake R Koelmel

Stephen Moffatt

Alexander Goldin

Kartik Ramaswamy

Kenneth S Collins

Andrew Nguyen

Hiroji Hanawa

Wolfgang R Aderhold

Amir Hamed Al-Bayati

Biagio Gallo

Leonid Mark Tertitski

Paul A O'Brien

Vernon Behrens

Shashank Sharma

Norman L Tam

Matthew Spuller

Xinming Zhang

Khaled Ahmed

Christopher Sean Olsen

Alexander N Lerner

Yi Ma

Sundar Ramamurthy

Paul G Carey

William Schaffer

Robert C McIntosh

Wei Liu

Randhir P S Thakur

Philip Allan Kraus

Joseph Yudovsky

Majeed Foad

Kartik Bhupendra Shah

Benjamin Colombeau

Yi-Chiau Huang

Huixiong Dai

Jiping Li

Ajit Balakrishna

Shulin Wang

Vedapuram S Achutharaman

Gary Eugene Miner

Wendy H Yeh

Mangesh Bangar

Kevin Laughton Cunningham

Toi Yue Becky Leung

Rajesh S Ramanujam

Preetham Rao

Chris D Bencher

Richard A Brough

Kelly E Hollar

Jaujiun Chen

David D L Larmagnac

Luc Van Autryve

Seshadri Ganguli

James Wilson

Jingmei Liang

Martin Jay Seamons

Kai Wu

Praket Prakash Jha

Oleg V Serebryanov

Dongming Iu

DongQing Li

Benjamin B Bierman

Xi Cen

Brian L Haas

Kartik Santhanam

Elizabeth Neville

Peter A Knoot

Zeqiong Zhao

Bindusagar Marath Sankarathodi

Shankar Muthukrishnan

Yong Sun

Ryan C Boas

Anthony F White

Yi Wang

Kong Lung Samuel Chan

Lewis A Stern

Dayal Ramachandran

Gia Pham

Andrew Minnick

Amritha Rammohan

Eugene Lobanov

Jau-Jiun Chen

Leonid M Teritski

Aaron Huntern

Haifan Lang

The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume. The substrate includes a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method includes forming a silicon-containing layer over the channel structure to a hydrogen-or-deuterium plasma in the first processing volume at a flow rate of about 10 sccm to about 5000 sccm. The substrate is maintained at a temperature of about 100° C. to about 1100° C. during the exposing, the exposing forming a nucleated substrate. Subsequent to the exposing a thermal anneal operation is performed on the substrate.

System and method for radical and thermal processing of substrates

Embodiments herein are directed to methods of forming titanium nitride films suitable for use as a bulk fill material for conductive features in a semiconductor device, such as for capacitor electrodes and/or buried word lines in a dynamic random-access memory (DRAM) device. In one embodiment, a method of forming conductive features in a semiconductor device is provided. The method includes thermally treating a substrate surface comprising at least portions of a titanium nitride layer in the presence of hydrogen radicals. Thermally treating the substrate includes positioning the substrate in a processing volume of a processing chamber, heating the substrate to a treatment temperature of more than about 250° C., generating the hydrogen radicals using a remote plasma source fluidly coupled to the processing volume, and maintaining the substrate at the treatment temperature while concurrently exposing the at least portions of the titanium nitride layer to the generated hydrogen radicals. Here, the substrate includes a field surface having a plurality of openings formed therein and the at least portions of the titanium nitride layer are disposed in the plurality of openings.

Treatment methods for titanium nitride films

A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.

Doping techniques

Aspects of the present disclosure relation to systems, methods, and apparatus for correcting thermal processing of substrates. In one aspect, a corrective absorption factor curve having a plurality of corrective absorption factors is generated.

Systems, methods, and apparatus for correcting thermal processing of substrates

Embodiments of the disclosure generally relate to a semiconductor processing chamber. In one embodiment, semiconductor processing chamber is disclosed and includes a chamber body having a bottom and a sidewall defining an interior volume, the sidewall having a substrate transfer port formed therein, and one or more absorber bodies positioned in the interior volume in a position opposite of the substrate transfer port.

Thermal chamber with improved thermal uniformity

A thermal processing apparatus and method in which a first laser source, for example, a COemitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the COradiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Annealing apparatus using two wavelengths of radiation

Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

Catalyst enhanced molybdenum deposition and gap fill

The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume. The substrate includes a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method includes forming a silicon-containing layer over the channel structure to a hydrogen-or-deuterium plasma in the first processing volume at a flow rate of about 10 sccm to about 5000 sccm. The substrate is maintained at a temperature of about 100&#xb0; C. to about 1100&#xb0; C. during the exposing, the exposing forming a nucleated substrate. Subsequent to the exposing a thermal anneal operation is performed on the substrate.

The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume being in fluid communication with a plasma source. The substrate can include a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method can also include forming an oxide cap layer over a silicon-containing layer of the channel structure and exposing the oxide cap layer to a hydrogen-or-deuterium radical to nucleate the silicon-containing layer of the channel structures of the substrate. Forming the oxide cap layer and exposing the channel structure with the hydrogen radical occurs in the first processing chamber to form a nucleated substrate. The method can also include positioning the nucleated substrate in a second processing chamber with a second processing volume and heating the nucleated substrate in the second processing chamber.

A pedestal for a thermal treatment chamber is disclosed that includes a body consisting of an optically transparent material. The body includes a first plate with a perforated surface having a plurality of nozzles formed therein, a first portion of the plurality nozzles formed in the body at an angle that is orthogonal to a plane of the first plate, a second portion of the plurality of nozzles formed in the body in an azimuthal orientation and at an acute angle relative to the plane of the first plate, and a third portion of the plurality nozzles formed in the body in a radial orientation and at an acute angle relative to the plane of the first plate.

Optically transparent pedestal for fluidly supporting a substrate

A method of post-treating a dielectric film formed on a surface of a substrate includes positioning a substrate having a dielectric film formed thereon in a processing chamber and exposing the dielectric film to microwave radiation in the processing chamber at a frequency between 5 GHz and 7 GHz.

Methods of post treating dielectric films with microwave radiation

Display screen or portion thereof with graphical user interface

A thermal processing apparatus and method in which a first laser source, for example, a COemitting at 10.6 &#x3bc;m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the COradiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

Method of thermal processing structures formed on a substrate

Growing community of inventors

Salinas, CA, United States of America

Abhilash J Mayur