Applied Materials, Inc.

Micro Materials Inc.

National University of Singapore

Mirocmaterials LLC

Other

Abhijit Basu Mallick

Pramit Manna

Srinivas Gandikota

Rui Cheng

Susmit Singha Roy

Eswaranand Venkatasubramanian

Nitin K Ingle

Yihong Chen

Ziqing Duan

Bo Qi

Kelvin Chan

Shishi Jiang

Takehito Koshizawa

Srinivas D Nemani

Ho-yung David Hwang

Yong Wu

Karthik Janakiraman

Mark Joseph Saly

Robert Jan Visser

Bhaskar Jyoti Bhuyan

Mukund Srinivasan

Uday Mitra

John Leonard Sudijono

Regina Germanie Freed

Atashi Basu

Ying Di Zhang

Kurtis Leschkies

Ellie Y Yieh

Juan Carlos Rocha-Alvarez

Swaminathan T Srinivasan

Ludovic Godet

Kartik Ramaswamy

Yang Yang

David P Thompson

Steven Verhaverbeke

Mehul B Naik

Deenesh Padhi

Praburam Gopalraja

Yi Yang

Fei C Wang

Praket Prakash Jha

Sanjay G Kamath

Nancy Fung

Jeffrey W Anthis

Timothy Weidman

Jianhua Zhou

Nicolas L Breil

Jingmei Liang

Timothy Joseph Franklin

Sanjay S Natarajan

Benjamin Schmiege

Erica Chen

Er-Xuan Ping

Anchuan Wang

Shankar Venkataraman

Mihaela A Balseanu

Alexandros T Demos

He Ren

Gaurav Thareja

Jay D Pinson, Ii

Zhenjiang Cui

Prerna Sonthalia Goradia

Xin Liu

Zihui Li

Jeffrey C Munro

Jaesoo Ahn

Lakmal Charidu Kalutarage

Tomohiko Kitajima

Daniel Lee Diehl

Thomas Jongwan Kwon

Jothilingam Ramalingam

Ning Li

Dmitry Lubomirsky

Philip Allan Kraus

Chi-I Lang

Zheng Yuan

Pravin K Narwankar

Xinliang Lu

Thai Cheng Chua

Mandyam Sriram

Abhishek Dube

Roman Gouk

Suketu Arun Parikh

Hari K Ponnekanti

Ren-Guan Duan

Thomas Knisley

Yi Zheng

Ralf Hofmann

Toan Q Tran

Wei V Tang

Kien Nai Chuc

Hang Yu

Dale R Dubois

Xiaolin C Chen

Qingjun Zhou

Jun Xue

Krishna Nittala

Sudhir R Gondhalekar

Jing Tang

Geetika Bajaj

A method includes selectively forming at least one passivation layer on at least one first conductive layer disposed in a first interlevel dielectric (ILD) layer, selectively forming at least one catalyst layer on the at least one passivation layer, wherein the at least one passivation layer prevents formation of the at least one catalyst layer on the first conductive layer, and selectively forming at least one supplemental dielectric layer using the at least one catalyst layer. The at least one catalyst layer induces formation of the at least one supplemental dielectric layer, and the at least one supplemental dielectric layer includes a dielectric material having a dielectric constant of less than or equal to about 4.

Electronic device fabrication using area-selective deposition

Exemplary methods of semiconductor processing include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. A flowrate ratio of the hydrogen-containing precursor to the carbon-containing precursor may be maintained greater than or about 2:1. The methods include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600° C.

Low temperature graphene growth

A method of processing a substrate is provided including flowing a deposition gas comprising a hydrocarbon compound and a dopant compound into a process volume having a substrate disposed positioned on a substrate support. The process volume is maintained at a pressure of about 0.5 mTorr to about 10 mTorr. The method includes generating a plasma at the substrate by applying a first RF bias to the substrate support to deposit a doped diamond-like carbon film on the substrate. The doped diamond-like carbon film includes about 5 at. % to about 25 at. % of dopant and a first stress property. The method includes annealing the doped diamond-like carbon film at about 220° C. to about 450° C. to form an annealed film. The annealed film includes a second stress property. The second stress property having an absolute value less than or within 10% the first stress property.

Methods of forming thermally stable carbon film

Methods and apparatus for processing a substrate are provided herein. For example, a method of processing a substrate comprises a) removing oxide from a metal layer disposed in a dielectric layer on the substrate disposed in a processing chamber, b) selectively depositing a self-assembled monolayer (SAM) on the metal layer using atomic layer deposition, c) depositing a precursor while supplying water to form one of an aluminum oxide (AlO) layer on the dielectric layer or a low-k dielectric layer on the dielectric layer, d) supplying at least one of hydrogen (H) or ammonia (NH) to remove the self-assembled monolayer (SAM), and e) depositing one of a silicon oxycarbonitride (SiOCN) layer or a silicon nitride (SiN) layer atop the metal layer and the one of the aluminum oxide (AlO) layer on the dielectric layer or the low-k dielectric layer on the dielectric layer.

Methods and apparatus for selective etch stop capping and selective via open for fully landed via on underlying metal

Methods for depositing film comprising cyclical exposure of a substrate surface to a precursor and a degas environment to remove gas evolved from the film. Some embodiments further comprise the incorporation poisoning the top of a feature to inhibit film growth at the top of the feature. Some embodiments further comprising etching a portion of the film deposited at the top of a feature between cycles to increase gap-fill uniformity.

Deposition of conformal and gap-fill amorphous silicon thin-films

Hard masks and methods of forming hard masks are described. The hard mask has an average roughness less than 10 nm and a modulus greater than or equal to 400 GPa. The method comprises exposing a substrate to a deposition gas comprising a dopant gas or a precursor (solid (e.g. Alkylborane compounds) or liquid (e.g. Borazine)), a carbon gas and argon at a temperature less than or equal to 550 C, and igniting a plasma from the deposition gas to form an ultrananocrystalline diamond film having an average roughness less than 10 nm and a modulus greater than or equal to 400 GPa.

Methods to reduce UNCD film roughness

Methods for forming defect-free gap fill materials comprising germanium oxide are disclosed. In some embodiments, the gap fill material is deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the gap fill material. A process for removal of germanium oxide is also disclosed.

Defect free germanium oxide gap fill

Methods of processing thin film by oxidation at high pressure are described. The methods are generally performed at pressures greater than 2 bar. The methods can be performed at lower temperatures and have shorter exposure times than similar methods performed at lower pressures. Some methods relate to oxidizing tungsten films to form self-aligned pillars.

High pressure oxidation of metal films

Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.

Low temperature growth of transition metal chalcogenides

Embodiments herein provide methods of plasma treating an amorphous silicon layer deposited using a flowable chemical vapor deposition (FCVD) process. In one embodiment, a method of processing a substrate includes plasma treating an amorphous silicon layer by flowing a substantially silicon-free hydrogen treatment gas into a processing volume of a processing chamber, the processing volume having the substrate disposed on a substrate support therein, forming a treatment plasma of the substantially silicon-free hydrogen treatment gas, and exposing the substrate having the amorphous silicon layer deposited on a surface thereof to the treatment plasma. Herein, the amorphous silicon layer is deposited using an FCVD process. The FCVD process includes positioning the substrate on the substrate support, flowing a processing gas into the processing volume, forming a deposition plasma of the processing gas, exposing the surface of the substrate to the deposition plasma, and depositing the amorphous silicon layer on the surface of the substrate.

Flowable film curing using H2 plasma

Methods for depositing a silicon-germanium film on a substrate are described. The method comprises exposing a substrate to a silicon precursor and a germanium precursor to form a conformal silicon-germanium film. The substrate comprises at least one film stack and at least one feature, the film stack comprising alternating layers of silicon and silicon-germanium. The silicon-germanium film has a conformality greater than 50%.

Conformal silicon-germanium film deposition

Apparatuses and methods for forming a film on a substrate are described. The film is formed on the substrate by depositing an adamantane monomer and an initiator on the substrate to form a polymerizable seed layer and curing the polymerizable seed layer to form a polyadamantane layer.

Method of forming a diamond film

Embodiments of the present disclosure generally relate to processes for forming silicon- and boron-containing films for use in, e.g., spacer-defined patterning applications. In an embodiment, a spacer-defined patterning process is provided. The process includes disposing a substrate in a processing volume of a processing chamber, the substrate having patterned features formed thereon, and flowing a first process gas into the processing volume, the first process gas comprising a silicon-containing species, the silicon-containing species having a higher molecular weight than SiH. The process further includes flowing a second process gas into the processing volume, the second process gas comprising a boron-containing species, and depositing, under deposition conditions, a conformal film on the patterned features, the conformal film comprising silicon and boron.

Processes for depositing sib films

Embodiments of the present disclosure generally relate to fabricating electronic devices, such as memory devices. In one or more embodiments, a method for forming a device includes forming a film stack on a substrate, where the film stack contains a plurality of alternating layers of oxide layers and nitride layers and has a stack thickness, and etching the film stack to a first depth to form a plurality of openings between a plurality of structures. The method includes depositing an etch protection liner containing amorphous-silicon on the sidewalls and the bottoms of the structures, removing the etch protection liner from at least the bottoms of the openings, forming a plurality of holes by etching the film stack in the openings to further extend each bottom of the openings to a second depth of the hole, and removing the etch protection liner from the sidewalls.

Processes to deposit amorphous-silicon etch protection liner

Methods for forming coating films comprising germanium oxide are disclosed. In some embodiments, the films are super-conformal to a feature on the surface of a substrate. The films are deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the super-conformal film.

Super-conformal germanium oxide films

Growing community of inventors

Palo Alto, CA, United States of America

Abhijit Basu Mallick