Applied Materials, Inc.

Abhijeet Laxman Sangle

Visweswaren Sivaramakrishnan

Vijay Bhan Sharma

Ankur Kadam

Yuan Xue

Bharatwaj Ramakrishnan

Nilesh Patil

A vapor deposition system and methods of operation thereof are disclosed. The vapor deposition system includes a vacuum chamber; a dielectric target within the vacuum chamber, the dielectric target having a front surface and a thickness; a substrate support within the vacuum chamber, the substrate support having a front surface spaced from the front surface of the dielectric target to form a process gap; and a signal generator connected to the dielectric target to generate a plasma in the vacuum chamber, the signal generator comprises a power source, the power source configured to prevent charge accumulation in the dielectric target. The method includes applying power to a dielectric target within a vacuum chamber to generate a plasma in a process gap between the dielectric target and a substrate support and pulsing the power applied to the dielectric target to prevent charge accumulation.

Pulsed DC power for deposition of film

A physical vapor deposition system includes a deposition chamber, a support to hold a substrate in the deposition chamber, a target in the chamber, a power supply configured to apply power to the target to generate a plasma in the chamber to sputter material from the target onto the substrate to form a piezoelectric layer on the substrate, and a controller configured to cause the power supply to alternate between deposition phases in which the power supply applies power to the target and cooling phases in which power supply does not apply power to the target. Each deposition phase lasts at least 30 seconds and each cooling phase lasts at least 30 seconds.

Physical vapor deposition of piezoelectric films

A quantum device includes a substrate including a first material and including an upper surface thereof, a first layer comprising a compound of the first material disposed on the upper surface of the substrate, a second layer, comprising a metal oxide, disposed on the first layer, a third layer, comprising a noble metal, disposed on the second layer, a fourth layer, comprising a metal oxide, disposed on the third layer, a fifth layer, comprising a piezoelectric material, disposed on the fourth layer, a sixth layer, comprising a noble metal, disposed on the fifth layer, a seventh layer, comprising a material capable of quantum emission, disposed on the sixth layer, and an eighth layer, comprising a noble metal, disposed on the seventh layer, and at least one of the eighth layer and the seventh layer are sized to enable quantum emission from the seventh layer.

Tuning of emission properties of quantum emission devices using strain-tuned piezoelectric template layers

A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400&#xb0; C., and thermally annealing the substrate at a temperature above 500&#xb0; C. to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.

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Maharashtra, India

Abhijeet Laxman Sangle