Kepler Computing Inc.

Abel Fernandez

Sasikanth Manipatruni

Amrita Mathuriya

Rajeev Kumar Dokania

Somilkumar J Rathi

Mauricio Manfrini

James David Clarkson

Niloy Mukherjee

Tanay Gosavi

Noriyuki Sato

Biswajeet Guha

A method of fabricating a device comprises forming a multi-layer stack above a first substrate, where multi-layer stack includes a non-linear polar material. In at least one embodiment, method further includes forming a first conductive layer on multi-layer stack and annealing multi-layer stack. A transistor is formed above a second substrate. In at least one embodiment, method also includes forming a second conductive layer above electrode structure and bonding first conductive layer with second conductive layer. After bonding, method includes removing at least a portion of first substrate patterning multi-layer stack to form a memory device.

Method of forming capacitors through wafer bonding

Method of integrating a capacitor including a non-linear polar material with a transistor through wafer bonding

Capacitor integrated with a transistor for logic and memory applications

Memory device fabrication through wafer bonding

Growing community of inventors

Berkeley, CA, United States of America

Abel Fernandez