King Abdulaziz City for Science and Technology

International Business Machines Corporation

University of California

Alfaisal University

Abdulrahman Albadri

Devendra K Sadana

Bahman Hekmatshoartabari

Steven P DenBaars

Katherine Lynn Saenger

Ahmed Alyamani

James Stephen Speck

Edreese Alsharaeh

Abdullah Ibrahim Alhassan

Sultan Barkah Alhoshan

Yasmin Mussa Ahmed Mussa

A method for fabricating an (Al,Ga,In,B)N or III-nitride semiconductor device, including performing a growth of III-nitride or (Al,Ga,In,B)N material including a p-n junction with an active region and using metal-organic chemical vapor deposition (MOCVD) or chemical vapor deposition; and performing a subsequent regrowth of n-type (Al,Ga,In,B)N or III-nitride material using MOCVD or chemical vapor deposition while utilizing a pulsed delta n-type doping scheme to realize an abrupt, smoother surface of the n-type material and a higher carrier concentration in the n-type material. In another example, the method comprises forming a mesa having a top surface; and activating magnesium in the p-type GaN of the (Al,Ga,In,B)N material through openings in the top surface that expose the p-type GaN's surface. The openings are formed before or after the subsequent regrowth of the tunnel junction.

Metal organic chemical vapor depostion (MOCVD) tunnel junction growth in III-nitride devices

A method for forming a photovoltaic device includes forming a doped layer on a crystalline substrate, the doped layer having an opposite dopant conductivity as the substrate. A non-crystalline transparent conductive electrode (TCE) layer is formed on the doped layer at a temperature less than 150 degrees Celsius. The TCE layer is flash annealed to crystallize material of the TCE layer at a temperature above about 150 degrees Celsius for less than 10 seconds.

Electrode formation for heterojunction solar cells

A novel perovskite layer to form a solar cell using 2D material with titanium dioxide are made using microwave technology is described. A specific layers of 2D nanocomposite is deposited between the Flourine-doped tin oxide (FTO) glass and hole transport material to make a more efficient perovskite solar cell is disclosed. The 2D materials are reduced graphene oxide, graphene oxide, hexagonal boron nitride (h-BN), transitional metal dichalcogenides, transition metal carbides, transitional metal nitrides etc. or a combination of the two 2D materials that are used as the mesoporous layer in perovskites.

Method of making a perovskite solar cell using a nanocomposite

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Riyadh, Saudi Arabia

Abdulrahman Albadri