Centre National De La Recherche Scientifique

France Telecom

Université Paris—sud

France Telecom Etablissement Autonome De Droit Public

Abderrahim Ramdane

Henri Benisty

Fabrice Devaux

Philippe Legay

Anatole Lupu

Natalia Dubrovina

Abdallah Ougazzaden

The invention relates to a distributed feedback laser diode () comprising a waveguide with a gain medium assisted by a network formed by a distribution of elements () including a sub-set comprising localised resonators () distributed along the axis of the waveguide, characterised in that the frequency characteristic of the feedback induced on the wave of the guide by the spatial distribution of said elements differs by less than 50% of the resonance frequency of said localised resonators.

Distributed feedback laser diode

An optoelectronic system comprising at least three sections corresponding to specific respective functions and having different respective band gap energies, at least for the adjacent pairs of sections. These three sections consist of at least two layers superposed by epitaxy. The upper layer is etched in order to define said sections in the form of two separate end sections defined in the upper layer on each side of an intermediate section defined in the lower layer, and to allow coupling between the intermediate section and each of the end sections which flank it, by evanescent coupling. The length of the intermediate section is such that the product K&times;L, in which K represents the coupling coefficient of a grating of the intermediate section, is one of the order of 1.

Optoelectronic system comprising several sections having respective functions coupled by evanescent coupling and production process

An integrated monolithic laser-modulator component having a multiple quantum well structure. This component includes an InP substrate, a laser (L) formed from a stack of semiconductor layers epitaxied on the substrate, including an active and absorbent layer and a periodic Bragg grating fixing the emission wavelength of the laser to a value slightly above an optimum wavelength of the laser gain peak. An electrooptical modulator (M) is formed from the same stack of semiconductor layers, with the exception of the Bragg grating, the active layer of the laser and the absorbing layer of the modulator being formed by the same epitaxied structure having several constrained or unconstrained quantum wells, the modulator functioning according to a confined Stark effect. The semiconductor layers of the laser and those of the modulator are electrically controlled.

Integrated monolithic laser-modulator component with multiple quantum

Growing community of inventors

Sceaux, France

Abderrahim Ramdane