Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat a L'energie Atomique

Abdenacer Ait-Mani

Stephanie Huet

Francois Marion

Lea Di Cioccio

Bertrand Chambion

François Marion

Manuel Fendler

Nohora-Lizeth Caicedo Panqueva

Alain Gueugnot

Guillaume Nonglaton

Stéphanie Huet

A method for manufacturing a structure includes: supplying an active element provided with a front and rear face connected by a contour; assembling the front face and a main face of a support; filling a space of interconnections between the front face and the main face with glue. The method also includes, before the assembling, forming, by a method other than a plasma method, a first passivation layer covering the contour, and made from a first compound that makes it possible to limit the wetting of said contour by the glue regarding the front face and the main face.

Method for manufacturing a structure

This method comprises the steps of: a) forming a set of first trenches on the first surface of the wafer; b) forming a set of second trenches on the second surface of the wafer, at least partially facing the first trenches; c) filling the first trenches with a first material having a CTE &#x3b1;; d) filling the second trenches with a second material having a CTE &#x3b1;, and verifying &#x3b1;&#x3e;&#x3b1;or &#x3b1;&#x3c;&#x3b1;depending on whether the first material verifies &#x3b1;&#x3e;&#x3b1;or &#x3b1;&#x3c;&#x3b1;.

Compensation of an arc curvature generated in a wafer

A method for obtaining a heterogeneous substrate intended for use in the production of a semiconductor comprises the following steps: (a) obtaining a first substrate () made from a type II-VI or type III-V material and a second substrate (), each substrate being substantially planar and each substrate having a pre-determined surface area; (b) grinding a non-through recess () into the second substrate (), the surface area of said recess being greater than the surface area of the first substrate, such that the first substrate can be housed in the recess; (c) depositing a bonding material () in the recess (); (d) depositing the first substrate () in the recess () of the second substrate and securing the first substrate in the second substrate at a temperature below 300&#xb0; C.; and (e) leveling the first and second substrates in order to obtain a heterogeneous substrate having a substantially planar face ().

Method for obtaining a heterogeneous substrate for the production of semiconductors

A method for producing at least one photosensitive infrared detector by assembling a first electronic component including plural photodiodes sensitive to infrared radiation and a second electronic component including at least one electronic circuit for reading the plurality of photodiodes, an infrared detector, and an assembly for producing such a detector, the method including: production, on each one of the first and second components, of a connection face formed at least partially by a silicon oxide (SiO2)-based layer; bonding the first component and the second component by the connection faces thereof, thus performing the direct bonding of the two components. The method can simplify hybridization of heterogeneous components for producing an infrared detector.

Method for producing photosensitive infrared detectors

A bonding method between at least two substrates comprises deposition of at least one drop of liquid adhesive on one of the two substrates and bringing the two substrates into contact causing spreading of the liquid adhesive followed by formation of a solidified adhesive layer between the two substrates. One of the two substrates is further provided, at the surface thereof, with at least one salient rim in which at least one slit is formed, designed to remove the excess liquid adhesive when the two substrates are brought into contact. Finally, the volume of liquid adhesive deposited on one of the two substrates is greater than the volume of the bonding space delineated by said rim between the contacted substrates, and the deposited drop of liquid adhesive presents a strictly greater height than the height of the rim. A defect-free solidified adhesive layer of calibrated thickness can thus be obtained.

Method for thickness-calibrated bonding between at least two substrates

The tweezers comprises two branches joined at a first end, a second end of each branch comprising a gripping element. The gripping element of each branch is mounted rotating freely around a swivel axis at the second end of said branch. The gripping element of each branch comprises a longitudinal axis perpendicular to the corresponding swivel axis, and a pad is fixed to a free end of said gripping element perpendicularly to said longitudinal axis of the gripping element.

Tweezers with gripping elements mounted swivelling on branches

The invention concerns a method of collective bonding of individual chips on a strained substrate (), which comprises the following steps: functionalised layers () are arranged on a support (), in an adjacent non-contiguous manner, with a space e between two neighboring layers (), a calibrated drop of adhesive () is deposited on each of these functionalised layers, the strained substrate () is transferred onto these drops of adhesive, the parts of the assembly thereby formed are singularized to produce chips () bonded to the surface of strained substrate. The invention also concerns a method of placing under strain a semiconductor reading circuit by a substrate in a material of different coefficient of expansion.

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Saint Egreve, France

Abdenacer Ait-Mani