Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Commissariat a L'energie Atomique Et Aux Energies

Abdelkader Aliane

Mohammed Benwadih

Jean-Louis Ouvrier-Buffet

Jean-Michel Hartmann

Denis Pelenc

Claire Vialle

Julie Widiez

Willy Ludurczak

Xavier Zucchi

Zouhir Mehrez

Valerie Goudon

Hacile Kaya

Philippe Coronel

Philippe Rodriguez

Olivier Haon

Romain Coppard

Luc Andre

Olivier Jean Poncelet

Jean-Jacques Yon

Jean-Marie Verilhac

Sébastien Becker

Jamal Tallal

Amélie Revaux

Marine Galliari

Tiphaine Card

Laurent Tournon

Alain Charpentier

Quentin Durlin

Valérie Goudon

A photodiode including a detection portion having a doped first region, a doped second region and an intermediate region; a dielectric layer; and a semiconductor peripheral portion. It also includes a ferroelectric peripheral portion located between and in contact with the intermediate layer and the dielectric layer, and located between the first region and the semiconductor peripheral portion and surrounding the first region in the main plane.

Passivated photodiode comprising a ferroelectric peripheral portion

An optoelectronic device includes an array of germanium-based photodiodes including a stack of semiconductor layers, made from germanium, trenches, and a passivation semiconductor layer, made from silicon. Each photodiode includes a silicon-germanium peripheral zone in the semiconductor portion formed through an interdiffusion of the silicon of the passivation semiconductor layer and of the germanium of the semiconductor portion.

Optoelectronic device having an array of germanium-based diodes with low dark current

The invention concerns an electromagnetic radiation detection structure () comprising at least one absorbing element defining an absorption plane, and a MOSFET transistor (). The transistor comprises: at least one first and at least one second zone () of a first type of conductivity; at least one third zone () separating the first and second zones () from each other; and a gate electrode. The first zone (), the third zone () and the second zone () are formed respectively by a first, a third and a second layer that extend in the absorption plane parallel to each other and are arranged one after another in a direction perpendicular to the absorption plane. The gate electrode covers the third zone () along at least one lateral wall of said third zone ().

Electromagnetic radiation detection structure with optimised absorption and method for forming such a structure

The invention relates to a planar photodiodeincluding a detection portionmade of a germanium-based material M, and a peripheral lateral portionincluding several materials stacked on top of one another, including a material Mhaving a coefficient of thermal expansion lower than that of the material M, and a material Mhaving a coefficient of thermal expansion higher than or equal to that of the material M. The intermediate regionincludes a portion Psurrounded by the material Mand having tensile stresses. It also includes a portion Psurrounded by the material Mand having compressive stresses. This portion Psurrounds a n doped box

Germanium-based planar photodiode with a compressed lateral peripheral zone

A method for forming a detection structure for detecting electromagnetic radiation includes an MOS transistor as a transducer. The method is based on the use of lateral extension elements as a doping mask for the semiconductor layer of the transistor and an etching mask for the same semiconductor layer, in order to provide contact portions of a drain and a source of the transistor.

Method for manufacturing a detection structure with an optimised absorption rate, and said structure

A detection system includes a readout substrate, at least one thermal detector associated with a reflector, and at least one compensation device including a compensation transducer in thermal contact with the readout substrate, arranged between the reflector and the readout substrate, and situated facing the reflector so as to be optically insensitive to the incident electromagnetic radiation.

Sensitive pixel based detection system comprising a thermal detector and a compensation device

A microbolometer may include a sensitive material based on vanadium oxide (VO) with an additional chemical element such as boron (B), but excluding nitrogen (N), the sensitive material wherein the sensitive material (i) is amorphous, (ii) has an electrical resistivity at ambient temperature in a range of from 1 to 30 &#x3a9;&#xb7;cm, (ii) has a homogeneous chemical composition, and (iv) has an amount of boron, defined as a ratio of a number of boron to vanadium atoms to that of vanadium, at least equal to 0.086.

Process for manufacturing a microbolometer containing vanadium oxide-based sensitive material

A method of forming an opening in an insulating layer covering a semiconductor region including germanium, successively including: the forming of a first masking layer on the insulating layer; the forming on the first masking layer of a second masking layer including an opening; the etching of an opening in the first masking layer, in line with the opening of the second masking layer; the removal of the second masking layer by oxygen-based etching; and the forming of the opening of said insulating layer in line with the opening of the first masking layer, by fluorine-based etching.

Contacting area on germanium

The invention relates to a process for fabricating at least tensilely strained planar photodiodecomprising producing a stack formed from a semiconductor layermade of a first material and from an antireflection layerproducing a peripheral trenchthat opens onto a seed sublayermade of a second material of the antireflection layerepitaxy of a peripheral sectionmade of the second material in the peripheral trenchand returning to room temperature, a detecting sectionthen being tensilely strained because of the difference in coefficients of thermal expansion between the two materials.

Process for fabricating at least one tensilely strained planar photodiode

A method of forming an area of electric contact with a semiconductor region mainly made of germanium, comprising the forming of a first area made of a first intermetallic material where more than 70% of the non-metal atoms are silicon atoms. There is also described a device including such a contacting area.

A heat-sensitive resistor with a negative or positive temperature coefficient comprises respectively an antimony-doped tin oxide-based resistive element or a carbon black-based resistive element, containing a polymer having a dielectric constant between 2 and 3, a molar mass between 50000 and 150000 g/mol, and a glass transition temperature Tg between 40 and 100&#xb0; C.

Temperature sensor with heat-sensitive paste

A process for fabricating an optoelectronic device including an array of germanium-based photodiodes including the following steps: producing a stack of semiconductor layers, made from germanium; producing trenches; depositing a passivation intrinsic semiconductor layer, made from silicon; annealing, ensuring, for each photodiode, an interdiffusion of the silicon of the passivation semiconductor layer and of the germanium of a semiconductor portion, thus forming a peripheral zone of the semiconductor portion, made from silicon-germanium.

Process for fabricating an array of germanium-based diodes with low dark current

The invention relates to a process for manufacturing a microbolometer () comprising a sensitive material () based on vanadium oxide (VO) comprising an additional chemical element chosen from among boron (B), carbon (C), with the exception of nitrogen (N), comprising the following steps:

A process for manufacturing at least one microbolometer comprising a sensitive material based on vanadium oxide containing nitrogen as additional chemical element, includes steps of determining a non-zero effective amount of the additional chemical element starting from which the sensitive material, having undergone a step of exposure to a temperature Tfor a duration &#x394;t, has an electrical resistivity &#x3c1;at ambient temperature greater than or equal to 50% of the native value &#x3c1;of said sensitive material at ambient temperature; producing the sensitive material in a thin layer having an amount of the additional chemical element greater than or equal to the effective amount determined beforehand, the sensitive material being amorphous and having an electrical resistivity of between 1 and 30 &#x3a9;&#xb7;cm; and exposing the sensitive material to a temperature Tfor a duration &#x394;t.

The invention relates to a method for manufacturing at least one passivated planar photodiode, comprising the following steps:

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Grenoble, France

Abdelkader Aliane