Triquint Technology Holding Co.

Lucent Technologies Inc.

Agere Systems Inc.

Agere Systems Guardian Corp.

Agere Systems Optoelectronics Guardian Corp.

Triquent Technology Holding, Co.

Abdallah Ougazzaden

Charles William Lentz

Yuliya Anatolyevna Akulova

Michael Geva

Kenneth Gerard Glogovsky

Charles H Joyner

George John Przybylek

Si Hyung Cho

Gleb E Shtengel

Ronald Eugene Leibenguth

Padman Parayanthal

Mark S Hybertsen

Claude Lewis Reynolds, Jr

Bettina A Nechay

Justin Larry Peticolas

Mindaugas Fernand Dautartas

Utpal Kumar Chakrabarti

Sung-Nee George Chu

Leonard Jan-Peter Ketelsen

William Crossley Dautremont-Smith

Lawrence Edwin Smith

Sun-Yuan Huang

Aaron Eugene Bond

Marlin Wilbert Focht

Claude L Reynolds

Jayatirtha N Holavanahalli

Andrei Sirenko

Justin Larry Peticolas, Jr

The present invention provides an optoelectronic device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optoelectronic device may include creating a multilayered optical substrate and then forming a self aligned dual mask over the multilayered optical substrate. The method may further include etching the multilayered optical substrate through the self aligned dual mask to form a mesa structure.

Optoelectronic device and method of manufacture thereof

The present invention provides an optical device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optical device may include isolating an end of a first layer from a cladding layer located over a mesa structure that has been formed from a substrate. The end of the first layer may be isolated from the cladding layer by encapsulating the end between second and third layers located adjacent the mesa structure.

Optical device and method of manufacture thereof

The invention is an optoelectronic device and method of fabrication where at least two optical devices are formed on a single semiconductor substrate, with each optical device including an active region such as a multi-quantum well region. The active devices are spatially separated and optically coupled by a passive waveguide formed over the substrate which provides butt joints with the active regions. The butt joints can be optimized independently from the active regions thus improving yield.

Integrated optoelectronics devices

A multi-layer dopant diffusion barrier is disclosed that effectively prevents dopant diffusion but does not contribute to parasitic pn junctions or parasitic capacitance. A multi-layer dopant diffusion barrier layer prevents dopant diffusion.

Dopant diffusion barrier layer for use in III-V structures

The present invention provides methods of manufacturing and integrating optical devices. In one embodiment, a method of integrating an optical device may include forming a first device over a substrate, and forming a second device over the substrate and adjacent the first device with a deposition gas having an etchant selective to a deposited component of the deposition gas.

Monolithic optical device manufacturing and integration methods

The present invention provides an optoelectronic device, a method of manufacture thereof, and an optical communication system including the same. The optoelectronic device may include, in one particular embodiment, an active device located over a substrate and a passive device located proximate the active device and over the substrate. The optoelectronic device may further include a doped cladding layer located over the active and passive devices and a barrier layer located over the doped cladding layer and the passive device.

Optoelectronic device having a barrier layer associated therewith and a method of manufacture thereof

The present invention relates to a multi-layer dopant barrier and its method of fabrication for use in semiconductor structures. In an illustrative embodiment, the multi-layer dopant barrier is disposed between a first doped layer and a second doped layer. The multi-layer dopant barrier further includes a first dopant blocking layer adjacent the first doped layer and a second dopant blocking layer adjacent the second doped layer. A technique for fabricating the multi layer dopant barrier is disclosed. A first dopant blocking layer is formed at a first temperature, and a second dopant blocking layer is formed at a second temperature over the first barrier layer.

Application of InAIAs double-layer to block dopant out-diffusion in III-V device Fabrication

A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffuision of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.

Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs

The invention is a semiconductor optical device and method of fabrication where the device includes an active region with an active layer having a first index of refraction, and a blocking region having a second, lower index of refraction. A semiconductor layer having an index of refraction higher than the blocking region is formed over both the active and blocking regions so that the semiconductor layer is in closer proximity to the active layer in areas not covered by the blocking region so as to decrease the difference between the effective index of refraction in the active region and the effective refractive index of the blocking region. Such devices are particularly useful for pumping optical amplifiers since greater power can be achieved while maintaining single mode emission.

Method of manufacturing semiconductor optical devices

A beam expander for providing coupling between a semiconductor optical device and an optical fiber comprises a double layer structure that may be integrated with the optical device. The first, underlying layer of the expander comprises a relatively high refractive index material (e.g., 3.34), thus providing improved coupling efficiency between the optical device and the fiber. The second, covering layer of the expander comprises a relatively low refractive index material (e.g., 3.28), for providing the large mode size desired at the fiber input. The parameters of each layer can be adjusted independently, allowing for the two criteria (coupling efficiency and mode size) to be separately optimized.

Double layer beam expander for device-to-fiber coupling

A mesa stripe buried heterostructure semiconductor laser with no intediffusion of atoms between doped regions and a method of its formation are disclosed. A double dielectric mask is used to form the mesa stripe. The first mask is then partially etched and a Si-doped InP layer is selectively grown. The first and second mask are subsequently etched away and an InP(Zn) clad layer, along with a Zn-doped InGaAs contact layer, are formed. This way, the resulting structure has no contact between the InP(Zn) clad layer and the InP(Fe) layer, and the dopant atoms interdiffusion is suppressed.

Method and device for preventing zinc/iron interaction in a semiconductor laser

The present invention provides a method for monolithic integration of multiple devices on an optoelectronic substrate. The method, in a preferred embodiment, includes forming an active layer having a given wavelength over a substrate. The method further includes forming an N-type doped layer over a portion of the active layer to form first and second active regions within the active layer, the first active region having the given wavelength and the second active region having an altered wavelength different from the given wavelength. In one exemplary embodiment, the conditions used to form the N-type doped layer, for example, dopant concentration, growth rate and temperature, cause the difference in wavelength between the given wavelength and the altered wavelength.

Method for monolithic integration of multiple devices on an optoelectronic substrate

A diffusion preventing barrier spike is disclosed. The spike prevents diffusion of dopants into another layer without forming a pn junction in the layer. The spikes are illustratively Al or an aluminum containing material such as AlAs and have a thickness on the order of 1 nm. The spikes of the present invention may be used to stop dopant diffusion out of a doped layer in a variety of III-V semiconductor structures, such a InP-based PIN devices.

Diffusion barrier spikes for III-V structures

A semiconductor waveguide device and method for forming the same provide an InAlAs film as an etch stop layer. The InAlAs film does not etch in the CH /H etch chemistry used to produce the device using reactive ion etching techniques. The etching process etches the waveguide layer and cladding layer or layers formed above the InAlAs layer, and exposes the InAlAs etch stop film to produce a waveguide device having desired physical characteristics.

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Breinigsville, PA, United States of America

Abdallah Ougazzaden