Infineon Technologies Ag

Qimonda Ag

Intel Corporation

Abdallah Bacha

Simon Muff

Georg Seidemann

Peter Gregorius

Hermann Ruckerbauer

Dominique Savignac

Paul Wallner

Christian Sichert

Siva RaghuRam

Lizabeth Keser

Josef Schuster

Eduardo De Mesa

Carlton Hanna

An electronic device comprises a first redistribution layer (RDL) including multiple sublayers of conductive traces formed in an organic material; a stiffening layer including one of a ceramic or glass, the stiffening layer including a first surface contacting a first surface of the first RDL and including a through layer via (TLV); and multiple integrated circuit (ICs) arranged on a second surface of the first RDL and including bonding pads, wherein the conductive traces of the first RDL provide electrical continuity between at least one bonding pad of the ICs and at least one TLV of the stiffening layer.

Glass core substrate printed circuit board for warpage reduction

A semiconductor memory arrangement includes a circuit board having at least a first layer and a second layer, a plurality of memory units, and a first control device and a second control device adapted to receive command and address signals. A first bus system is disposed in the first layer of the circuit board and coupled to the first control device and to a first group of memory units of the plurality of memory units to transmit the command and address signals to the first group of memory units. A second bus system is disposed in the second layer of the circuit board and coupled to the second control device and to a second group of memory units of the plurality of memory units to transmit the command and address signals to the second group of memory units.

Semiconductor memory arrangement

A memory module with a module board is disclosed, on the front side of which a plurality of first memory devices are arranged in rows. A plurality of second memory devices are arranged in rows on the back side. The first and second memory devices have a single chip each. Further, a first register device for providing first control signals to first rows of first memory devices and to first rows of second memory devices is provided. A second register device serves to provide first control signals to second rows of first memory devices and to second rows of second memory devices.

Memory module

In a first embodiment, the invention provides a memory module having an electronic printed circuit board and a plurality of semiconductor chips of the same type that are mounted on at least one outer face of the printed circuit board. The printed circuit board has a connector strip, which runs at a first edge of the at least one outer face in a first direction and has a multiplicity of electrical contacts that are lined up in the first direction. The printed circuit board extends in the first direction between two opposite second edges. At least nine of the semiconductor chips of the same type are respectively mounted next to one another on the outer face of the printed circuit board between the center of the printed circuit board and the respective second edge of the printed circuit board. The semiconductor chips of the same type respectively have a smaller dimension and, in the direction perpendicular to the smaller dimension, a larger dimension that is larger than the smaller dimension. A respective first group of four of the semiconductor chips of the same type, which are oriented so as to have their shorter dimension parallel to the connector strip, is arranged at the respective second edge of the printed circuit board. A second group of five semiconductor chips of the same type is respectively arranged between the first group of semiconductor chips and the center of the printed circuit board. The first group of semiconductor chips and the second group of semiconductor chips are actuated by two separate line buses whose conductor tracks branch toward all the semiconductor chips in the respective group of semiconductor chips.

Memory module with an electronic printed circuit board and a plurality of semiconductor chips of the same type

A semiconductor memory module includes a plurality of semiconductor memory chips and bus signal lines that supply an incoming clock signal and incoming command and address signals to the semiconductor memory chips. A clock signal regeneration circuit and a register circuit are arranged on the semiconductor memory module in a common chip packing connected to the bus signal lines. The clock signal regeneration circuit and the register circuit respectively condition the incoming clock signal and temporarily store the incoming command and address signals, respectively multiply the conditioned clock signal and the temporarily stored command and address signals by a factor of 1:X, and respectively supply to the semiconductor memory chips the conditioned clock signal and the temporarily stored command and address signals.

Memory module with a clock signal regeneration circuit and a register circuit for temporarily storing the incoming command and address signals

A method and a device for time measurement at a designated signal pin or associated solder pad on a semiconductor module on which semiconductor chips are mounted using the ball-grid-array technique. Integrated on the semiconductor module in the direct vicinity of a solder pad associated with the signal pin to be measured is an equivalent conductor pattern, which can be loaded with passive components in such a way that, in the loaded state, it forms an equivalent load circuit for the designated signal pin which simulates the time-relevant characteristic electrical values of the designated signal pin. The measurement takes place after connection of the ELC to a solder pad associated with the signal pin, with the semiconductor chip detached from the semiconductor module.

Growing community of inventors

Munich, Germany

Abdallah Bacha