International Business Machines Corporation

Abbas Behfar-Rad

Christoph S Harder

Heinz P Meier

Mark E Jost

Krishna Gandhi Sachdev

Charles Hampton Perry

Ranee W Kwong

Alfred Phillips, Jr

Peter P Kwan

Sridhar V Iyer

A planar, topology free, semiconductor quantum-well laser is described. The quantum-well active layer is formed and patterned in a specified region which is constrained on all sides by high bandgaps which are formed through the use of impurity-free diffusion techniques. After the impurity-free diffusion has taken place, an upper portion is then epitaxially deposited to complete the structure. High-power, single fundamental mode laser operation is achieved by funneling current into the constrained quantum-well active region, high bandgap regions in conjunction with low index of refraction in regions surrounding the active area. The structure is further designed to allow low beam divergence in the direction perpendicular to the semiconductor laser junction.

Semiconductor laser with low vertical far-field

An electrical probe card for parametric testing of microelectronics having reduced leakage current, includes a hydrophobic layer of a self curing silicone material coating the entire exposed surface of the ceramic card between exposed conductors. The hydrophobic layer has a thickness of less than 1 micrometer, preferably less than 0.1 micrometer and most preferably between 0.01 and 0.001 micrometers. The hydrophobic layer does not interfere with subsequent soldering to the contacts on the card, is inexpensive, solvent resistant and easily applied to new and pre-existing probe cards. The method of application involves applying an excess of the hydrophobic silicone material in its uncured state, followed by vigorously wiping excess material off to thin the layer, produce a good bond and clean the exposed conductors on the probe card.

Ceramic probe card and method for reducing leakage current

Planar, topology-free, single-mode, high-power semiconductor

A semiconductor ridge waveguide laser structure with a roughened sidewall ridge that includes a substrate and an active layer disposed between lower and upper cladding layers. The structure further includes a waveguide ridge which comprises a contact layer and a trapezoidal ridge portion 16 of the upper cladding layer. The trapezoidal ridge portion has roughened sidewalls which provides low contact resistance.

Roughened sidewall ridge for high power fundamental mode semiconductor

What is disclosed is a semiconductor ridge waveguide laser structure having mechanical protection of ridge element by means of a thick, multi-layer organic material. The organic material, which may be a polyimide film, is deposited over the ridge element. The present invention also provides a fabrication process for depositing the protective means on the ridge element including deposition and photolithographic steps.

Protection means for ridge waveguide laser structures using thick

A semiconductor ridge waveguide laser having a high value of horizontal far-field wherein the laser structure includes a substrate, a first or lower cladding layer composed of a AlGaAs on the substrate, an acting layer on the lower cladding layer, and a second or upper cladding layer composed of AlGaAs on the active layer. The upper cladding layer includes a raised ridge portion formed by etching the upper cladding layer through a mask. A contact layer is disposed on top of the ridge portion. The aluminum mole concentration of the lower cladding layer is greater than the aluminum mole concentration of the upper cladding layer. This forces the optical mode towards the upper cladding layer and results in an increased lateral waveguide confinement that produces a high horizontal far-field.

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Wappingers Falls, NY, United States of America

Abbas Behfar-Rad