General Electric Company

Lockheed Martin Corporation

Momentive Performance Materials Gmbh

Gelcore, LLC

Abasifreke Udo Ebong

Steven Francis LeBoeuf

Robert J Wojnarowski

Mark Philip D'Evelyn

Stephen Daley Arthur

Venkat Subramaniam Venkataramani

Stanton Earl Weaver, Jr

Kanakasabapathi Subramanian

Peter Micah Sandvik

Samhita Dasgupta

Vinayak Tilak

Edward Brittain Stokes

Thomas Paul Feist

Jeffrey Bernard Fortin

James Neil Johnson

Steven Alfred Tysoe

Venkatesan Manivannan

Larry Burton Rowland

Charles Adrian Becker

Nikhil Taskar

Xian-an Cao

Evan Taylor Downey

Stanton E Weaver

Jiunn-Ru Jeffrey Huang

Xian An (Andrew) Cao

An etchant including a halogenated salt, such as Cryolite (NaAlF) or potassium tetrafluoro borate (KBF), is provided. The salt may be present in the etchant in an amount sufficient to etch a substrate and may have a melt temperature of greater than about 200 degrees Celsius. A method of wet etching may include contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the support layer may include aluminum oxide; or contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the etchant may include Cryolite (NaAlF), potassium tetrafluoro borate (KBF), or both; and etching at least a portion of the support layer. The method may provide a laminate produced by growing a crystal onto an aluminum oxide support layer, and chemically removing at least a portion of the support layer by wet etch. An electronic device, optical device or combined device including the laminate is provided.

Etchant, method of etching, laminate formed thereby, and device

The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED's. In an embodiment of the invention, the UV-LED's are characterized by a base layer material including a substrate, a p-doped semiconductor material, a multiple quantum well, a n-doped semiconductor material, upon which base material a p-type metal resides and wherein the base structure has a mesa configuration, which mesa configuration may be rounded on a boundary surface, or which may be non-rounded, such as a mesa having an upper boundary surface that is flat. In other words, the p-type metal resides upon a mesa formed out of the base structure materials. In a more specific embodiment, the UV-LED structure includes n-type metallization layer, passivation layers, and bond pads positioned at appropriate locations of the device. In a more specific embodiment, the p-type metal layer is encapsulated in the encapsulating layer.

Monolithic array for solid state ultraviolet light emitters

A photovoltaic device comprising a photovoltaic cell is provided. The photovoltaic cell includes an emitter layer comprising a crystalline semiconductor material and a lightly doped crystalline substrate disposed adjacent the emitter layer. The lightly doped crystalline substrate and the emitter layer are oppositely doped. Further, the photovoltaic device includes a back surface passivated structure coupled to the photovoltaic cell. The structure includes a highly doped back surface field layer disposed adjacent the lightly doped crystalline substrate. The highly doped back surface field layer includes an amorphous or a microcrystalline semiconductor material, wherein the highly doped back surface field layer and the lightly doped crystalline substrate are similarly doped, and wherein a doping level of the highly doped back surface field layer is higher than a doping level of the lightly doped crystalline substrate. Additionally, the structure may also include an intrinsic back surface passivated layer disposed adjacent the lightly doped crystalline substrate, where the intrinsic back surface passivated layer includes an amorphous or a microcrystalline semiconductor material.

Surface passivated photovoltaic devices

A flip chip light emitting diode die (&#x2033;) includes a light-transmissive substrate (&#x2033;) and semiconductor layers (&#x2033;) that are selectively patterned to define a device mesa (&#x2033;). A reflective electrode (&#x2033;) is disposed on the device mesa (&#x2033;). The reflective electrode (&#x2033;) includes a light-transmissive insulating grid () disposed over the device mesa (&#x2033;), an ohmic material () disposed at openings of the insulating grid () and making ohmic contact with the device mesa (&#x2033;), and an electrically conductive reflective film (&#x2033;) disposed over the insulating grid () and the ohmic material (). The electrically conductive reflective film (&#x2033;) electrically communicates with the ohmic material ().

Flip-chip light emitting diode

Techniques for automatically generating three dimensional geometric circuit models from a computer aided design (CAD) of a light emitting diode (LED) device. The models may comprise a robust netlist that may be executed using circuit simulation packages. The spatial positioning of each element in the design is preserved during simulation, such that simulation output data can be used to reconstruct a geometric rendition or map of the electrical current flowing through the LED device. The output data from the circuit simulation may then used to reconstruct a three-dimensional rendition of the current spreading uniformity across the design and a quantitative value for the uniformity may be obtained. Using the present techniques, a designer can predict the current spreading uniformity for any particular LED layout, isolate and correct current crowding areas, and reevaluate the design to meet uniformity specifications.

Techniques for modeling current spreading uniformity in light emitting diodes

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Marietta, GA, United States of America

Abasifreke Udo Ebong