Nxp B.v.

Freescale Semiconductor,inc.

Nxp Usa, Inc.

Aarul Jain

Rakesh Pandey

Arvind Kaushik

Dirk Wendel

Neha Agarwal

Deboleena Sakalley

Nishant Jain

Hemant Nautiyal

Rohit Kumar Kaul

Ankush Sethi

Ashu Gupta

Rohit S Patel

A fault indication from a fault source is to be provided to a demultiplexer which is configured to output the fault indication. The demultiplexer is configurable to output the fault indication to an OR gate of a plurality of OR gates coupled to a respective fault channel of a plurality of fault channels based on an application which uses the fault source as a resource. A reaction to the fault indication is performed based on the fault channel which received the fault indication.

Method and apparatus for fault aggregation and support for virtualization

A system-on-chip (SoC) may include a plurality of terminals and a plurality of terminal controllers. Each terminal controller is configured to selectively disable a terminal. An SoC be configured to execute at least one application. An SoC may include a memory configured to store a plurality of terminal masks. Each terminal mask identifies a subset of the plurality of terminals to be disabled. An SoC may include a fault collection and reaction system configured to transmit, to the plurality of terminal controllers, a fault indication signal in response to an error in a corresponding application. Each terminal controller is further configured to determine, based on a fault indication signal and a value in a terminal mask, whether the terminal corresponding to the terminal controller is to be disabled, and when the terminal corresponding to the terminal controller is to be disabled, disable the terminal.

Method and apparatus for selective input/output (IO) terminal safe-stating for independent on-chip applications

An address fault detection system includes write and read access circuits and a fault management circuit. The write access circuit receives an address and reference data for a write operation associated with a memory and parity data generated based on the reference data, and writes the reference data and the parity data to first and second memory blocks of the memory, respectively. The read access circuit receives the same address for a read operation associated with the memory and reads another reference data and another parity data from the first and second memory blocks, respectively. The fault management circuit compares the read parity data with parity data generated based on the read reference data to detect an address fault in the memory. The written and read reference data are different when the address fault is detected, and same when the address fault is not detected.

Address fault detection system

An error detection system detects errors in data packets stored in a memory. A read signature generation circuit generates a read signature of a first data packet. A write signature generation circuit generates a write signature of a second data packet. When a trigger generation circuit generates a trigger signal, a first latching circuit stores a write address as a latch write address and a second latch stores the write signature as a latch write signature. A first synchronization and comparison circuit generates a comparison signal based on the latched write address and a read address. A second synchronization and comparison circuit generates a fault signal based on the comparison signal, the latched write signature, and the read signature.

Memory error detection system

A method and circuit for generating a shifted strobe signal for sampling data read from a memory device includes generating an instantiation of a shifted strobe signal by applying both a coarse adjustment delay value and a fine adjustment delay value to a clock. Data read from a predetermined, programmed memory location or locations of the memory device is sampled using the shifted strobe signal. At least one of the applying steps is repeated and the read data is sampled again using the current instantiation of the shifted strobe signal. The process is repeated until the current instantiation of the shifted strobe signal is aligned with a valid data window of the memory device. The method can be used in both single data rate and double data rate applications.

Data strobe signal generation for flash memory

A single-port memory that operates in single-cycle dual-port mode has a logical capacity of N=k&#xb7;m memory words and (k+1) single-port RAM having an overall physical capacity of (k+1)&#xb7;m memory words. A status register holds words identifying which RAM bank has the last data at the iaddress in the RAM banks and defining k status words for valid data among the (k+1) RAM banks. Write data is written to the write address of a valid RAM bank for a write operation in the absence of RAM bank read address contention. Write data is written to the write address of a different RAM bank that has no valid data for a write operation if there is contention with the RAM bank read address RADDR of a read operation. The status register is updated to identify the RAM bank of the write operation.

Growing community of inventors

New Delhi, India

Aarul Jain